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參數(shù)資料
| 型號： | BRT13-H-X006 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | O RING |
| 中文描述： | 光耦，光敏輸出 |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 354K |
| 代理商： | BRT13-H-X006 |
VISHAY
BRT11/ 12/ 13
Vishay Semiconductors
Document Number 83689
Rev. 1.4, 26-Apr-04
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
2)
Static air, SITAC soldered in pcb or base plate.
Output
2)
Static air, SITAC soldered in pcb or base plate.
Coupler
Parameter
Test condition
I
F
= 10 mA
V
R
= 6 V
Symbol
V
F
I
R
R
thja
Min
Typ.
1.1
Max
1.35
Unit
V
μ
A
°C/W
Forward voltage
Reverse current
10
Thermal resistance
2)
junction - ambient
750
Parameter
Test condition
Symbol
dV/dt
cr
Min
10
Typ.
Max
Unit
kV/
μ
s
Critical rate of rise of off-state
voltage
V
D
= 0.67 V
DRM
, T
J
= 25 °C
V
D
= 0.67 V
DRM
, T
J
= 80 °C
V
D
= 0.67 V
DRM
, T
J
= 25 °C,
dI/dt
crq
≤
15 A/ms
V
D
= 0.67 V
DRM
, T
J
= 80 °C,
dI/dt
crq
≤
15 A/ms
dV/dt
cr
dV/dt
crq
5
kV/
μ
s
kV/
μ
s
Critical rate of rise of voltage at
current commutation
10
dV/dt
crq
5
kV/
μ
s
Critical rate of rise of on-state
current
Pulse current
dI/dt
cr
8
A/
μ
s
t
p
≤
5
μ
s, f 0 100 Hz,
dI
tp
/dt
≤
8 A/
μ
s
I
T
= 300 mA
T
C
= 80 °C, V
DRM
V
D
= 10 V
R
thJA
I
tp
2
A
On-state voltage
V
T
I
D
I
H
R
thja
2.3
V
μ
A
μ
A
°C/W
Off-state current
0.5
100
Holding current
80
500
Thermal resistance
2)
junction -
ambient
125
Parameter
Test condition
Symbol
I
FT
I
FT
I
FT
/
T
j
Min
0.4
Typ.
Max
2
Unit
mA
Trigger current
V
D
= 10 V, H - Versions
V
D
= 10 V, M - Versions
0.8
3
mA
μ
A/°C
Trigger current temperature
gradient
Capacitance (input-output)
7
14
V
R
= 0 V, f = 1 kHz
C
IO
2
pF
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