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參數(shù)資料
| 型號： | BR9040F |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | 1, 2, and 4k bit EEPROMs for direct connection to serial ports |
| 中文描述： | 1，2，和4K的，可直接連接到串行端口位的EEPROM |
| 文件頁數(shù)： | 15/17頁 |
| 文件大?。?/td> | 187K |
| 代理商： | BR9040F |
15
Memory ICs
BR9010 / BR9010F / BR9010FV / BR9020 / BR9020F /
BR9040 / BR9040F
Operation notes
(1) Turning the power supply on and off
1) When the power supply is turned on and off, CS should be set to HIGH ( = V
CC
).
2) When CS is LOW, the command input reception state (active) is entered. If the power supply is turned on in this
state, erroneous operations and erroneous writing can occur because of noise and other factors. To avoid this,
make sure CS is set to HIGH ( = V
CC
) before turning on the power supply.
(Good example) Here, the CS pin is pulled up to V
CC
.
When turning off the power supply, wait at least 10msec before turning it on again. Failing to
observe this condition can result in the internal circuit failing to be reset when the power sup-
ply is turned on.
(Bad example)
CS is LOW when the power supply is turned on or off
In this case, because CS remains LOW, the EEPROM may perform erroneous operations or
write erroneous data because of noise or other factors.
Please be aware that the case shown in this example can also occur if CS input is HIGH-Z.
(2) Noise countermeasures
1) SKnoise
If noise occurs at the rise of the SK clock input, the clock is assumed to be excessive, and this can cause mal-
function because the bits are out of alignment.
2) WC noise
During a writing operation, noise at the WC pin can be erroneously judged to be data, and this can cause writing
to be forcibly interrupted.
3) V
CC
noise
Noise and surges on the power supply line can cause malfunction. We recommend installing a bypass capacitor
between the power supply and ground to eliminate this problem.
V
CC
V
CC
GND
V
CC
GND
Good example
Bad example
CS
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BR9010 | 1, 2, and 4k bit EEPROMs for direct connection to serial ports |
| BR9010F | 1, 2, and 4k bit EEPROMs for direct connection to serial ports |
| BR9010FV | 1, 2, and 4k bit EEPROMs for direct connection to serial ports |
| BR9080 | 8k, 16k bit EEPROMs for direct connection to serial ports |
| BR9080AF-W | 8k, 16k bit EEPROMs for direct connection to serial ports |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BR9040F-D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Memory LSIs |
| BR9040FV-W | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:メモリLSI |
| BR9040F-W | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Memory LSIs |
| BR9040F-WE2 | 功能描述:電可擦除可編程只讀存儲器 3 WIRE SERIAL DIRECT CONNECT RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| BR9040RFVM-W | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Memory LSIs |
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