參數(shù)資料
型號(hào): BR9040-D
英文描述: Silicon Rectifier Diodes
中文描述: 內(nèi)存大規(guī)模集成電路
文件頁(yè)數(shù): 9/14頁(yè)
文件大?。?/td> 202K
代理商: BR9040-D
BR9010-W / F-W / FV-W / RFV-W / RFVM-W / BR9020-W / F-W / FV-W /
Memory IC
RFV-W / RFVM-W / BR9040-W / F-W / FV-W / RFV-W / RFVM-W
9/14
(3) Read Cycle
HIGH or LOW
Fig.3 BR9010-W / F--W / FV-W / RFV-W / RFVM-W
1
4
8
16
32
1
HIGH-Z
H
SK
CS
DI
DO
WC
L
H
L
H
L
0
1
1
0
0
0
0
A0
A5
0
0
D0
D15
D15
D0
HIGH-Z
STANDBY
t
CS
t
OH
R / B
H
Read Data (n)
Read Data (n+1)
HIGH or LOW
Fig.4 BR9020-W / F-W / FV-W / RFV-W / RFVM-W
1
4
8
16
32
48
1
HIGH-Z
H
SK
CS
DI
DO
R / B
WC
L
H
L
H
L
H
0
1
1
0
0
0
0
A0
A6
0
D0
Read Data (n)
Read Data (n+1)
D15
D15
D0
HIGH-Z
STANDBY
t
CS
t
OH
HIGH or LOW
Fig.5 BR9040-W / F-W / FV-W / RFV-W / RFVM-W
1
4
8
16
32
1
HIGH-Z
H
SK
CS
DI
DO
R / B
WC
L
H
L
H
L
H
0
1
1
0
0
0
0
A0
A6
A7
D0
Read Data (n)
Read Data (n+1)
D15
D15
D0
HIGH-Z
STANDBY
t
CS
t
OH
1) On the falling edge of 16 th clock, the data stored in the specified address (n) is clocked out of the DO pin.
The Output DO is toggled after the internal propagation t
PDO
or
t
PD1
on the falling edge of SK. During t
PD0
or t
PD1,
the data
is the previous data or unstable, and to take in the data, t
PD
is needed. (Refer to Fig.1 Synchronous data input output
timing.)
2) The data stored in the next address is clocked out of the device on the falling edge of 32nd clock. The data stored in
the upper address every 16 clocks is output sequentially by the continual SK input. Also the read operation is reset by
CS High.
相關(guān)PDF資料
PDF描述
BR9040F-D Silicon Rectifier Diodes
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