參數(shù)資料
型號(hào): BR24L16F-W
廠(chǎng)商: Rohm CO.,LTD.
英文描述: 2k】8 bit electrically erasable PROM
中文描述: 2k】8位電可擦除可編程ROM
文件頁(yè)數(shù): 10/26頁(yè)
文件大?。?/td> 390K
代理商: BR24L16F-W
BR24L16-W / BR24L16F-W / BR24L16FJ-W /
Memory ICs
BR24L16FV-W / BR24L16FVM-W
10/25
z
Byte write
SDA
LINE
WP
S
T
A
R
T
SLAVE
ADDRESS
1 0
0
1
R
/
W
W
R
I
T
E
A
C
K
A
C
K
D7
DATA
D0
S
T
O
P
Fig.8 BYTE WRITE CYCLE TIMING
A
C
K
WORD
ADDRESS
WA
0
WA
7
P0
P1
P2
By using this command, the data is programed into the indicated word address.
When the master generates a STOP condition, the device begins the internal write cycle to the nonvolatile memory
array.
z
Page write
Fig.9 PAGE WRITE CYCLE TIMING
SDA
LINE
WP
S
T
A
R
T
SLAVE
ADDRESS
1 0
0
1
R
/
W
W
R
I
T
E
A
C
K
A
C
K
A
C
K
D7
DATA (n)
D0
DATA (n+7)
D0
S
T
O
P
A
C
K
WORD
ADDRESS (n)
WA
0
WA
7
P0
P1
P2
This device is capable of sixteen byte Page Write operation.
When two or more byte data are inputted, the four low order address bits are internally incremented by one after the
receipt of each word. The seven higher order bits of the address (P2 to P0, WA7 to WA4) remain constant.
If the master transmits more than sixteen words, prior to generating the STOP condition, the address counter will
“roll over”, and the previous transmitted data will be overwritten.
相關(guān)PDF資料
PDF描述
BR24L16FJ-W 2k】8 bit electrically erasable PROM
BR24L16FV-W 2k】8 bit electrically erasable PROM
BR24L16FVM-W 2k】8 bit electrically erasable PROM
BR24L32FV-W 4k】8 bit electrically erasable PROM
BR24L32 4k】8 bit electrically erasable PROM
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