參數(shù)資料
型號: BR24L16-W
廠商: Rohm CO.,LTD.
英文描述: 2k】8 bit electrically erasable PROM
中文描述: 2k】8位電可擦除可編程ROM
文件頁數(shù): 18/26頁
文件大小: 390K
代理商: BR24L16-W
BR24L16-W / BR24L16F-W / BR24L16FJ-W /
Memory ICs
BR24L16FV-W / BR24L16FVM-W
18/25
LV
CC
circuit
LV
CC
circuit inhibit write operation at low voltage, and prevent an inadvertent write. Below the LV
CC
voltage
(Typ.=1.2V), write operation is inhibited.
6) I / O circuit
Pull up resister of SDA pin
The pull up resister is needed because SDA is NMOS open drain. Decide the value of this resister (R
PU
) properly,
by considering V
IL
, I
L
characteristics of a controller which control the device and V
OH
, I
OL
characteristics of the device.
If large R
PU
is chosen, clock frequency need to be slow. In case of small R
PU
, the operating current increases.
Maximum of R
PU
Maximum of R
PU
is determined by following factor.
x
SDA rise time determined by R
PU
and the capacitance of bus line (CBUS) must be less than T
R
.
And the other timing must keep the conditions of AC spec.
y
When SDA bus is HIGH, the voltage A of SDA bus determined by a total input leak (I
L
) of the all devices
connected
to the bus and R
PU
must be enough higher than input HIGH level of a controller and the device,
including noise margin 0.2 V
CC
.
A
IL
IL
MICRO
COMPUTER
BR24LXX
SDA PIN
R
PU
THE CAPACITANCE OF
BUS LINE (CBUS)
V
CC
I
L
R
PU
0.2V
CC
V
IH
R
PU
0.8V
CC
V
IH
IL
R
PU
0.8
×
3
0.7
×
3
10
×
10
6
300 [k
]
Examples : When V
CC
=
3V I
L
=
10
μ
A V
IH
=
0.7V
CC
According to 2
相關(guān)PDF資料
PDF描述
BR24L16F-W 2k】8 bit electrically erasable PROM
BR24L16FJ-W 2k】8 bit electrically erasable PROM
BR24L16FV-W 2k】8 bit electrically erasable PROM
BR24L16FVM-W 2k】8 bit electrically erasable PROM
BR24L32FV-W 4k】8 bit electrically erasable PROM
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