參數(shù)資料
型號： BR03
廠商： NXP Semiconductors N.V.
英文描述： Silicon Bi-directional Trigger Device(可控硅雙向觸發(fā)器件)
中文描述： 硅雙向觸發(fā)裝置（可控硅雙向觸發(fā)器件）
文件頁數(shù)： 1/3頁
文件大小： 14K
代理商： BR03
Philips Semiconductors
Product Specification
Silicon Bi-directional Trigger Device
BR100/03
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Siliconbidirectional trigger device in a
glass envelope intended for use in
triac and thyristor trigger circuits.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
(BO)
V
O
I
FRM
Breakover voltage
Output voltage
Repetitive peak forward current
28
7
-
36
-
2
V
V
A
OUTLINE - SOD27
SYMBOL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
I
FRM
Repetitive peak forward
current
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Operating junction
temperature
CONDITIONS
t
≤
10
μ
s, T
a
≤
50C; f = 60 Hz
MIN.
-
MAX.
2
UNIT
A
T
a
= 50C
-
150
125
100
mW
C
C
-55
-
THERMAL RESISTANCES
SYMBOL
R
th j-a
PARAMETER
Thermal resistance junction to in free air
ambient
Thermal resistance junction to
leads
CONDITIONS
MIN.
-
TYP.
330
MAX.
-
UNIT
K/W
R
th j-lead
-
150
-
K/W
CHARACTERISTICS
T
a
= 25 C unless otherwise stated.
SYMBOL
V
(BO)
|V
(BO)+
| - |V
(BO)-
|
V
O
I
dV
(BO)
/dT
PARAMETER
Breakover voltage
Breakover voltage symmetry
Output voltage
Breakover current
Temperature coefficient of
V
Risetime
CONDITIONS
I = I
(BO)
I = I
, see fig: 1
R
= 20
; Circuit of fig: 2
V = V
(BO)
MIN.
28
-
7
-
-
TYP.
32
-
-
-
0.1
MAX.
36
3.5
-
50
-
UNIT
V
V
V
μ
A
%/K
t
r
I
p
= 0.5 A; Circuit of fig: 2
-
1.5
μ
s
February 1996
1
Rev 1.100
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