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參數(shù)資料
| 型號(hào)： | BPX43 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Phototransistor(高靈敏度NPN外延平面型光晶體管) |
| 中文描述： | 硅npn型光電晶體管（高靈敏度npn型外延平面型光晶體管） |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | BPX43 |
BPX43
Vishay Telefunken
3 (6)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81534
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
25
T
amb
– Ambient Temperature (
°
C )
50
75
100
0
200
400
800
150
94 8342
600
125
P
t
R
thJC
R
thJA
Figure 1. Total Power Dissipation vs.
Ambient Temperature
94 8343
20
I
C
T
amb
– Ambient Temperature (
°
C )
10
0
10
1
10
2
10
3
10
4
10
6
10
5
150
50
100
V
CE
=20V
E=0
Figure 2. Collector Dark Current vs.
Ambient Temperature
94 8344
0
50
100
150
T
amb
– Ambient Temperature (
°
C )
0
0.5
1.0
1.5
2.0
3.5
I
c
2.5
3.0
V
CE
=5V
E
e
=1mW/cm
2
=950nm
Figure 3. Relative Collector Current vs.
Ambient Temperature
0.01
0.1
1
0.01
0.1
1
10
100
I
c
E
e
– Irradiance ( mW/cm
2
)
10
94 8369
V
CE
=5V
=950nm
6
5
4
Figure 4. Collector Light Current vs.
Irradiance
0.1
1
10
0.1
1
10
I
c
V
CE
– Collector Emitter Voltage ( V )
100
94 8370
E
e
=1mW/cm
2
0.5mW/cm
2
0.2mW/cm
2
0.1mW/cm
2
0.05mW/cm
2
0.02mW/cm
2
BPX43-5
=950nm
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
0.01
0.1
1
10
0
200
400
600
800
B
I
C
– Collector Current ( mA )
100
94 8363
V
CE
=5V
6
5
4
Figure 6. Amplification vs. Collector Current
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BPX43/5 | 制造商:Vishay Semiconductors 功能描述:PHOTOTRANSISTOR CHIP SILICON NPN TRANSISTOR 920NM 3PIN TO-18 - Bulk |
| BPX431V | 制造商:TFK 功能描述:BPX431V |
| BPX43-2 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| BPX43-3 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| BPX43-3/4 | 制造商:OSRAM 功能描述:IR TO18 Phototransistor 30??,BPX43-3/4 |
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