參數(shù)資料
型號： BPX38-6
廠商： Vishay Intertechnology,Inc.
英文描述： Silicon NPN Phototransistor
中文描述： 硅npn型光電晶體管
文件頁數(shù)： 2/6頁
文件大?。?/td> 87K
代理商： BPX38-6
BPX43
Vishay Telefunken
2 (6)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81534
Basic Characteristics
T
amb
= 25 C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Emitter Base Capacitance
Collector Base Capacitance
Collector Light Current
Test Conditions
I
C
= 1 mA
Symbol
V
(BR)CE
O
I
CEO
C
CEO
C
EBO
C
CBO
I
ca
Min
70
Typ
Max
Unit
V
V
CE
= 25 V, E = 0
V
CE
= 0 V, f = 1 MHz, E = 0
V
EB
= 0 V, f = 1 MHz, E = 0
V
CB
= 0 V, f = 1 MHz, E = 0
E
e
= 0.5 mW/cm
2
,
= 950 nm, V
CE
= 5 V
= 950 nm
E
e
= 0.5 mW/cm
2
,
= 950 nm, V
CB
= 5 V
10
23
47
41
200
nA
pF
pF
pF
mA
0.8
Temp. Coefficient of I
ca
Base Light Current
TK
Ica
I
ba
1
10
%/K
A
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
±
15
920
deg
nm
nm
V
p
0.5
630...1040
0.15
E
e
= 0.5 mW/cm
2
,
= 950 nm, I
C
= 0.1 mA
V
CEsat
0.3
Type Dedicated Characteristics
T
amb
= 25 C
Parameter
Current Gain
Test Conditions
V
= 5 V,
CE
I
C
= 1 mA
Type
BPX38–4
BPX38–5
BPX38–6
BPX38–4
BPX38–5
BPX38–6
BPX38–4
BPX38–5
BPX38–6
Symbol
B
B
B
I
ca
I
ca
I
ca
t
r
, t
f
t
r
, t
f
t
r
, t
f
Min
Typ
330
520
650
0.7
1.25
2
15
20
25
Max
Unit
Collector Light Current E
=0.5 mW/cm
2
,
0.5
0.8
1.25
1.0
1.6
mA
mA
mA
e
=950nm, V
CE
=5V
Rise Time/ Fall Time
V
=5V, I
=1mA,
CE
R
L
=1k =820nm
s
s
s
C
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