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參數(shù)資料
| 型號： | BPW96B |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Phototransistor |
| 中文描述： | 硅npn型光電晶體管 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大?。?/td> | 84K |
| 代理商： | BPW96B |
BPW96
Vishay Telefunken
3 (6)
Rev. 3, 16-Nov-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81532
94 8239
0
0.6
0.8
1.0
1.2
1.4
2.0
I
c
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
100
1.6
1.8
V
CE
=5V
E
e
=1mW/cm
2
=950nm
Figure 3. Relative Collector Current vs.
Ambient Temperature
0.01
0.1
1
0.01
0.1
1
10
I
c
E
e
– Irradiance ( mW/cm
2
)
10
94 8296
V
CE
=5V
=950nm
BPW96A
BPW96B
BPW96C
Figure 4. Collector Light Current vs. Irradiance
0.1
1
10
0.1
1
10
I
c
V
CE
– Collector Emitter Voltage ( V )
100
94 8297
E
e
=1mW/cm
2
0.5mW/cm
2
0.2mW/cm
2
0.1mW/cm
2
0.05mW/cm
2
=950nm
BPW96B
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
0.1
1
10
0
2
4
6
8
10
V
CE
– Collector Emitter Voltage ( V )
100
94 8301
C
C
f=1MHz
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
0
2
4
6
12
0
2
8
14
94 8293
t
o
I
C
– Collector Current ( mA )
o
6
4
10
8
V
CE
=5V
R
L
=100
=950nm
t
off
t
on
Figure 7. Turn On/Turn Off Time vs. Collector Current
400
600
1000
0
0.2
0.4
0.6
0.8
1.0
S
r
– Wavelength ( nm )
94 8348
800
Figure 8. Relative Spectral Sensitivity vs. Wavelength
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BPW96C | Silicon NPN Phototransistor |
| BPW97 | Silicon PIN Photodiode(反向電壓60V，寬帶光檢測器應用的PIN光二極管) |
| BPW97 | Silicon PIN Photodiode |
| BPX43 | Silicon NPN Phototransistor(高靈敏度NPN外延平面型光晶體管) |
| BPX38-6 | Silicon NPN Phototransistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BPW96B | 制造商:Vishay Semiconductors 功能描述:Optical Sensor (Photodetector - "NPN") P |
| BPW96C | 功能描述:光電晶體管 NPN Phototransistor 70V 150mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPW96C | 制造商:Vishay Semiconductors 功能描述:OPTICAL SENSOR (PHOTODETECTOR - "NPN") P |
| BPW97 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon PIN Photodiode |
| BPWU600B-001REVA | 制造商:GETRO 功能描述: |
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