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參數(shù)資料
| 型號： | BPW96 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Phototransistor |
| 中文描述： | 硅npn型光電晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 84K |
| 代理商： | BPW96 |
BPW96
Vishay Telefunken
2 (6)
Rev. 3, 16-Nov-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81532
Basic Characteristics
T
amb
= 25 C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Test Conditions
I
C
= 1 mA
Symbol
V
(BR)CE
O
I
CEO
C
CEO
Min
70
Typ
Max
Unit
V
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
1
3
200
nA
pF
deg
nm
nm
V
±
20
850
p
0.5
620...980
E
e
= 1 mW/cm
2
,
= 950 nm, I
C
= 0.1 mA
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
CEsat
0.3
t
on
2.0
s
Turn–Off Time
t
off
2.3
s
Cut–Off Frequency
f
c
180
kHz
Type Dedicated Characteristics
T
amb
= 25 C
Parameter
Collector Light Current E
=1mW/cm
2
,
Test Conditions
Type
BPW96A
BPW96B
BPW96C
Symbol
I
ca
I
ca
I
ca
Min
1.5
2.5
4.5
Typ
2.5
4.5
8
Max
4.5
7.5
15
Unit
mA
mA
mA
e
=950nm, V
CE
=5V
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0
40
80
120
160
200
P
t
100
94 8300
R
thJA
Figure 1. Total Power Dissipation vs.
Ambient Temperature
94 8304
20
I
C
100
40
60
80
T
amb
– Ambient Temperature (
°
C )
10
0
10
1
10
2
10
3
10
4
V
CE
=20V
Figure 2. Collector Dark Current vs. Ambient Temperature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BPW96A | Silicon NPN Phototransistor |
| BPW96B | Silicon NPN Phototransistor |
| BPW96C | Silicon NPN Phototransistor |
| BPW97 | Silicon PIN Photodiode(反向電壓60V，寬帶光檢測器應(yīng)用的PIN光二極管) |
| BPW97 | Silicon PIN Photodiode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BPW96A | 功能描述:光電晶體管 NPN Phototransistor 70V 150mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPW96A | 制造商:Vishay Semiconductors 功能描述:Optical Sensor (Photodetector - "NPN") P |
| BPW96B | 功能描述:光電晶體管 NPN Phototransistor 70V 150mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPW96B | 制造商:Vishay Semiconductors 功能描述:Optical Sensor (Photodetector - "NPN") P |
| BPW96C | 功能描述:光電晶體管 NPN Phototransistor 70V 150mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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