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參數(shù)資料
| 型號： | BPW85A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Phototransistor |
| 中文描述： | 硅npn型光電晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 86K |
| 代理商： | BPW85A |
BPW85
Vishay Telefunken
2 (6)
Rev. 3, 16-Nov-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81531
Basic Characteristics
T
amb
= 25 C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Test Conditions
I
C
= 1 mA
Symbol
V
(BR)CE
O
I
CEO
C
CEO
Min
70
Typ
Max
Unit
V
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
1
3
200
nA
pF
deg
nm
nm
V
±
25
850
p
0.5
620...980
E
e
= 1 mW/cm
2
,
= 950 nm, I
C
= 0.1 mA
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
CEsat
0.3
t
on
2.0
s
Turn–Off Time
t
off
2.3
s
Cut–Off Frequency
f
c
180
kHz
Type Dedicated Characteristics
T
amb
= 25 C
Parameter
Collector Light Current E
=1mW/cm
2
,
Test Conditions
Type
BPW85A
BPW85B
BPW85C
Symbol
I
ca
I
ca
I
ca
Min
0.8
1.5
3.0
Typ
1.5
2.5
5.0
Max
2.5
4.0
8.0
Unit
mA
mA
mA
e
=950nm, V
CE
=5V
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0
25
50
75
100
125
P
t
100
94 8308
R
thJA
Figure 1. Total Power Dissipation vs. Ambient Temperature
94 8304
20
I
C
100
40
60
80
T
amb
– Ambient Temperature (
°
C )
10
0
10
1
10
2
10
3
10
4
V
CE
=20V
Figure 2. Collector Dark Current vs. Ambient Temperature
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| BPW85B | Silicon NPN Phototransistor |
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| BPW96 | Silicon NPN Phototransistor(用于檢測的高靈敏度NPN外延平面型光晶體管) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BPW85A | 制造商:Vishay Semiconductors 功能描述:OPTICAL SENSOR (PHOTODETECTOR - "NPN") P |
| BPW85B | 功能描述:光電晶體管 NPN Phototransistor 70V 100mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPW85B | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1 制造商:Vishay Semiconductors 功能描述:OPTICAL SENSOR (PHOTODETECTOR - "NPN") P |
| BPW85C | 功能描述:光電晶體管 NPN Phototransistor 70V 100mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPW85C | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1 |
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