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參數(shù)資料
| 型號(hào)： | BPW76A |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Phototransistor |
| 中文描述： | 硅npn型光電晶體管 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大小： | 82K |
| 代理商： | BPW76A |
BPW76
Vishay Telefunken
2 (6)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81526
Basic Characteristics
T
amb
= 25 C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
Collector Emitter Capacitance
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Test Conditions
I
C
= 1 mA
Symbol
V
(BR)CE
O
I
CEO
C
CEO
Min
70
Typ
Max
Unit
V
V
CE
= 20 V, E = 0
V
CE
= 5 V, f = 1 MHz, E = 0
1
6
100
nA
pF
deg
nm
nm
V
±
40
850
p
0.5
620...980
0.15
E
e
= 1 mW/cm
2
,
= 950 nm, I
C
= 0.1 mA
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
S
= 5 V, I
C
= 5 mA,
R
L
= 100
V
CEsat
0.3
t
on
6
s
Turn–Off Time
t
off
5
s
Cut–Off Frequency
f
c
110
kHz
Type Dedicated Characteristics
T
amb
= 25 C
Parameter
Collector Light Current E
=1mW/cm
2
,
Test Conditions
Type
BPW76A
BPW76B
Symbol
I
ca
I
ca
Min
0.4
0.6
Typ
0.6
1.2
Max
0.8
Unit
mA
mA
e
=950nm, V
CE
=5V
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
25
T
amb
– Ambient Temperature (
°
C )
50
75
100
0
200
400
800
150
94 8342
600
125
P
t
R
thJC
R
thJA
Figure 1. Total Power Dissipation vs.
Ambient Temperature
94 8343
20
I
C
T
amb
– Ambient Temperature (
°
C )
10
0
10
1
10
2
10
3
10
4
10
6
10
5
150
50
100
V
CE
=20V
E=0
Figure 2. Collector Dark Current vs. Ambient Temperature
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PDF描述 |
|---|---|
| BPW76 | Silicon NPN Phototransistor |
| BPW76 | Silicon NPN Phototransistor(高靈敏度NPN外延平面型晶體管) |
| BPW77N | Silicon NPN Phototransistor(高靈敏度NPN外延平面型光晶體管) |
| BPW78B | Silicon NPN Phototransistor |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BPW76A | 制造商:Vishay Semiconductors 功能描述:OPTICAL SENSOR (PHOTODETECTOR - "NPN") P |
| BPW76A_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor |
| BPW76B | 功能描述:光電晶體管 NPN Phototransistor 80V 250mW 850nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPW77 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor |
| BPW77A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | 50M | CAN-4.7 |
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