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參數(shù)資料
| 型號(hào)： | BPW43 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon PIN Photodiode(反向電壓32V,光檢測(cè)器應(yīng)用的PIN光二極管) |
| 中文描述： | 硅PIN光電二極管（32V的反向電壓，光檢測(cè)器應(yīng)用的密碼光二極管） |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | BPW43 |
BPW43
Vishay Telefunken
2 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81523
Basic Characteristics
T
amb
= 25 C
Parameter
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Test Conditions
I
R
= 100 A, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 5 V, f = 1 MHz, E = 0
V
R
= 10 V, f = 1 MHz, E = 0
E
A
= 1 klx
E
A
= 1 klx
E
e
= 1 mW/cm
2
, = 950 nm
E
A
= 1 klx, V
R
= 5 V
E
e
= 1 mW/cm
2
,
= 950 nm, V
R
= 5 V
Symbol
V
(BR)
I
ro
C
D
C
D
C
D
V
o
I
k
I
k
I
ra
I
ra
Min
32
Typ
Max
Unit
V
nA
pF
pF
pF
mV
A
A
A
A
1
4
10
1.5
1.3
320
12
6
15
8
Open Circuit Voltage
Short Circuit Current
Reverse Light Current
4
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Rise Time
±
25
900
deg
nm
nm
ns
p
0.5
t
r
550...1000
4
V
R
= 10 V, R
L
= 50 ,
= 820 nm
V
R
= 10 V, R
L
= 50 ,
= 820 nm
Fall Time
t
f
4
ns
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
20
40
60
80
1
10
100
1000
I
r
T
amb
– Ambient Temperature (
°
C )
100
94 8427
V
R
=10V
Figure 1. Reverse Dark Current vs. Ambient Temperature
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0.6
0.8
1.0
1.2
1.4
I
r
100
94 8416
V
R
=5V
=950nm
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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