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參數(shù)資料
| 型號： | BPW41N |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | Photodiode PIN Chip 950nm 2-Pin Side View |
| 中文描述： | Photodiodes 60V 215mW 950nm |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 83K |
| 代理商： | BPW41N |
BPW41N
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 23-Aug-11
2
Document Number: 81522
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Relative Reverse Light Current vs. Ambient Temperature
Fig. 2 - Reverse Light Current vs. Irradiance
Fig. 3 - Reverse Light Current vs. Reverse Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Breakdown voltage
Reverse dark current
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
Open circuit Voltage
E
e
= 1 mW/cm
2
,
λ
= 950 nm
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
,
λ
= 950 nm
Short circuit current
E
e
= 1 mW/cm
2
,
λ
= 950 nm
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
TEST CONDITION
I
R
= 100 μA, E = 0
V
R
= 10 V, E = 0
SYMBOL
V
(BR)
I
ro
C
D
C
D
V
o
TK
Vo
I
k
TK
Ik
MIN.
60
TYP.
MAX.
UNIT
V
nA
pF
pF
mV
mV/K
μA
%/K
2
30
Diode capacitance
70
25
350
- 2.6
38
0.1
40
Reverse light current
V
R
= 5 V
I
ra
43
45
μA
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
λ
p
λ
0.5
NEP
t
r
t
f
± 65
950
deg
nm
nm
W/
√
Hz
ns
ns
870 to 1050
4 x 10
-14
100
100
V
R
= 10 V,
λ
= 950 nm
V
R
= 10 V, R
L
= 1 k
Ω
,
λ
= 820 nm
V
R
= 10 V, R
L
= 1 k
Ω
,
λ
= 820 nm
0.6
0.8
1.0
1.2
1.4
94 8409
V
= 5
V
λ
= 950 nm
100
80
60
40
20
0
I
v
e
v
e
u
r
T - Am
b
ient Temperat
u
re (°C)
r
0.01
0.1
1
0.1
1
10
100
1000
I
v
e
u
r
r
E
e
- Irradiance (m
W
/cm2)
10
94 8414
V
= 5
V
= 950 nm
λ
0.1
1
10
1
10
100
V
R
- Re
v
erse
V
oltage (
V
)
100
94 8415
I
r
-
v
e
u
r
1 m
W
/cm
2
0.5 m
W
/cm
2
0.2 m
W
/cm
2
0.1 m
W
/cm
2
0.05 m
W
/cm
2
0.02 m
W
/cm
2
= 950 nm
λ
0
20
40
60
80
948407
E = 0
f = 1 MHz
C
D
V
R
- Re
v
erse
V
oltage (
V
)
0.1
100
1
10
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