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參數(shù)資料
| 型號(hào)： | BPW34 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | Photodiode PIN Chip 900nm 2-Pin |
| 中文描述： | Photodiodes 65 Degree 215mW |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 108K |
| 代理商： | BPW34 |
BPW34, BPW34S
Vishay Semiconductors
www.vishay.com
Rev. 2.1, 23-Aug-11
2
Document Number: 81521
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Breakdown voltage
Reverse dark current
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 3 V, f = 1 MHz, E = 0
Open circuit voltage
E
e
= 1 mW/cm
2
,
λ
= 950 nm
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
,
λ
= 950 nm
TEST CONDITION
I
R
= 100 μA, E = 0
V
R
= 10 V, E = 0
SYMBOL
V
(BR)
I
ro
C
D
C
D
V
o
TK
Vo
I
k
I
k
TK
Ik
I
ra
MIN.
60
TYP.
MAX.
UNIT
V
nA
pF
pF
mV
mV/K
μA
μA
%/K
μA
2
30
Diode capacitance
70
25
350
- 2.6
70
47
0.1
75
40
Short circuit current
E
A
= 1 klx
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
A
= 1 klx, V
R
= 5 V
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
R
= 5 V
Temperature coefficient of I
k
Reverse light current
I
ra
40
50
μA
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
λ
p
λ
0.1
NEP
t
r
t
f
± 65
900
deg
nm
nm
W/
√
Hz
ns
ns
430 to 1100
4 x 10
-14
100
100
V
R
= 10 V,
λ
= 950 nm
V
R
= 10 V, R
L
= 1 k
Ω
,
λ
= 820 nm
V
R
= 10 V, R
L
= 1 k
Ω
,
λ
= 820 nm
20
40
60
80
1
10
100
1000
100
94 8403
V
R
= 10 V
T
am
b
- Am
b
ient Temperat
u
re (°C)
I
r
v
e
u
r
0.6
0.8
1.0
1.2
1.4
I
r
v
e
v
e
u
r
T
am
b
- Am
b
ient Temperat
u
re (°C)
94 8416
V
= 5 V
λ
= 950 nm
0
100
80
60
40
20
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