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參數(shù)資料
| 型號： | BPW24R |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | Photodiode PIN Chip 900nm 0.6A/W Sensitivity 2-Pin TO-18 |
| 中文描述： | Photodiodes 60V 210mW 900nm |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 145K |
| 代理商： | BPW24R |
BPW24R
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 11-Aug-11
2
Document Number: 81520
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Breakdown voltage
Reverse dark current
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 5 V, f = 1 MHz, E = 0
V
R
= 20 V, f = 1 MHz, E = 0
Open circuit voltage
E
e
= 1 mW/cm
2
,
= 950 nm
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
,
= 950 nm
Short circuit current
E
e
= 1 mW/cm
2
,
= 950 nm
Temperature coefficient of I
k
E
e
= 1 mW/cm
2
,
= 950 nm,
TEST CONDITION
I
R
= 100 μA, E = 0
V
R
= 50 V, E = 0
SYMBOL
V
(BR)
I
ro
C
D
C
D
C
D
V
o
TK
Vo
I
k
TK
Ik
MIN.
60
TYP.
200
2
11
3.8
2.5
450
- 2
55
0.1
MAX.
UNIT
V
nA
pF
pF
pF
mV
mV/K
μA
%/K
10
Diode capacitance
E
A
= 1 klx
Reverse light current
V
R
= 20 V
I
ra
45
60
μA
Absolute Spectral Sensitivity
V
R
= 5 V,
= 870 nm
V
R
= 5 V,
= 900 nm
s(
)
s(
)
p
0.1
t
r
t
f
0.60
0.55
± 12
900
A/W
A/W
deg
nm
nm
ns
ns
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
400
1100
V
R
= 20 V, R
L
= 50
,
= 820 nm
V
R
= 20 V, R
L
= 50
,
= 820 nm
7
7
40
60
80
120
94 8454
100
20
10
0
10
1
10
2
10
3
10
4
V
R
= 50 V
T
amb
- Ambient Temperature (°C)
I
r
0.6
0.8
1.0
1.2
1.4
94 8409
V
= 5 V
λ
= 950 nm
100
80
60
40
20
0
I
T - Ambient Temperature (°C)
r
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相關代理商/技術參數(shù) |
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|---|---|
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