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參數(shù)資料
| 型號： | BPW21R |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | Photodiode PIN Chip 565nm 2-Pin TO-5 |
| 中文描述： | Photodiodes 50 Degree 300mW |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 127K |
| 代理商： | BPW21R |
BPW21R
www.vishay.com
Vishay Semiconductors
Rev. 1.7, 23-Nov-11
2
Document Number: 81519
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 5 V, f = 1 MHz, E = 0
Dark resistance
Open circuit voltage
Temperature coefficient of V
o
Short circuit current
Temperature coefficient of I
K
Reverse light current
Sensitivity
V
R
= 5 V, E
A
= 10
-2
to 10
5
lx
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
V
R
= 0 V, R
L
= 1 k
Ω
,
λ
= 660 nm
Fall time
V
R
= 0 V, R
L
= 1 k
Ω
,
λ
= 660 nm
TEST CONDITION
I
F
= 50 mA
I
R
= 20 μA, E = 0
V
R
= 5 V, E = 0
SYMBOL
V
F
V
(BR)
I
ro
C
D
C
D
R
D
V
o
TK
Vo
I
k
TK
Ik
I
ra
S
λ
p
λ
0.5
t
r
t
f
MIN.
TYP.
1.0
MAX.
1.3
UNIT
V
V
nA
nF
pF
G
Ω
mV
mV/K
μA
%/K
μA
nA/Ix
deg
nm
nm
μs
μs
10
2
30
Diode capacitance
1.2
400
38
450
- 2
9
- 0.05
9
9
± 50
565
420 to 675
3.1
3.0
V
R
= 10 mV
E
A
= 1 klx
E
A
= 1 klx
E
A
= 1 klx
E
A
= 1 klx
E
A
= 1 klx, V
R
= 5 V
280
4.5
4.5
40
60
80
120
100
20
I
-
r
94 8468
10
10
1
10
2
10
3
10
4
V
R
= 5 V
T
amb
- Ambient Temperature (°C)
0
20
40
60
80
0.8
0.9
1.0
1.1
1.3
120
1.2
100
94 8738
T
amb
- Ambient Temperature
I
r
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|---|---|
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