參數(shù)資料
型號: BPW16N
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon NPN Phototransistor(檢測器應(yīng)用的NPN外延平面型光晶體管)
中文描述: 硅npn型光電晶體管(檢測器應(yīng)用的npn型外延平面型光晶體管)
文件頁數(shù): 3/5頁
文件大?。?/td> 76K
代理商: BPW16N
BPW16N
Vishay Telefunken
3 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81515
94 8239
0
0.6
0.8
1.0
1.2
1.4
2.0
I
c
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
100
1.6
1.8
V
CE
=5V
E
e
=1mW/cm
2
=950nm
Figure 3. Relative Collector Current vs.
Ambient Temperature
0.01
0.1
1
0.001
0.01
0.1
1
I
c
E
e
– Irradiance ( mW/cm
2
)
10
94 8236
V
CE
=5V
=950nm
Figure 4. Collector Light Current vs. Irradiance
0.1
1
10
0.01
0.1
1
I
c
V
CE
– Collector Emitter Voltage ( V )
100
94 8237
E
e
=1mW/cm
2
=950nm
0.5mW/cm
2
0.2mW/cm
2
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
0.1
1
10
0
4
8
12
16
20
C
C
V
CE
– Collector Emitter Voltage ( V )
100
94 8240
f=1MHz
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
0
4
8
12
0
2
4
6
8
12
t
o
I
C
– Collector Current ( mA )
16
94 8238
10
o
V
CE
=5V
R
L
=100
=950nm
t
off
t
on
Figure 7. Turn On/Turn Off Time vs. Collector Current
400
600
1000
0
0.2
0.4
0.6
0.8
1.0
S
r
– Wavelength ( nm )
94 8241
800
Figure 8. Relative Spectral Sensitivity vs. Wavelength
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BPW17N Silicon NPN Phototransistor
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