參數(shù)資料
型號(hào): BPW16
廠商: Vishay Intertechnology,Inc.
英文描述: Silicon NPN Phototransistor
中文描述: 硅npn型光電晶體管
文件頁(yè)數(shù): 3/5頁(yè)
文件大小: 76K
代理商: BPW16
BPW16N
Vishay Telefunken
3 (5)
Rev. 2, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81515
94 8239
0
0.6
0.8
1.0
1.2
1.4
2.0
I
c
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
100
1.6
1.8
V
CE
=5V
E
e
=1mW/cm
2
=950nm
Figure 3. Relative Collector Current vs.
Ambient Temperature
0.01
0.1
1
0.001
0.01
0.1
1
I
c
E
e
– Irradiance ( mW/cm
2
)
10
94 8236
V
CE
=5V
=950nm
Figure 4. Collector Light Current vs. Irradiance
0.1
1
10
0.01
0.1
1
I
c
V
CE
– Collector Emitter Voltage ( V )
100
94 8237
E
e
=1mW/cm
2
=950nm
0.5mW/cm
2
0.2mW/cm
2
Figure 5. Collector Light Current vs.
Collector Emitter Voltage
0.1
1
10
0
4
8
12
16
20
C
C
V
CE
– Collector Emitter Voltage ( V )
100
94 8240
f=1MHz
Figure 6. Collector Emitter Capacitance vs.
Collector Emitter Voltage
0
4
8
12
0
2
4
6
8
12
t
o
I
C
– Collector Current ( mA )
16
94 8238
10
o
V
CE
=5V
R
L
=100
=950nm
t
off
t
on
Figure 7. Turn On/Turn Off Time vs. Collector Current
400
600
1000
0
0.2
0.4
0.6
0.8
1.0
S
r
– Wavelength ( nm )
94 8241
800
Figure 8. Relative Spectral Sensitivity vs. Wavelength
相關(guān)PDF資料
PDF描述
BPW16N Silicon NPN Phototransistor
BPW16N PHOTOTRANSISTOR NPN 1.8MM CLEAR
BPW17N Silicon NPN Phototransistor(檢測(cè)器應(yīng)用的NPN外延平面型光晶體管)
BPW17N Silicon NPN Phototransistor
BPW17N Phototransistor Chip Silicon 825nm 2-Pin T-3/4
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BPW16N 功能描述:光電晶體管 NPN Phototransistor 32V 100mW 825nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
BPW16N 制造商:Vishay Semiconductors 功能描述:OPTICAL SENSOR (PHOTODETECTOR - "NPN") P
BPW16N_08 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant
BPW17N 功能描述:光電晶體管 NPN Phototransistor 32V 100mW 825nm RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
BPW17N 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T3/4