- 您現(xiàn)在的位置：買賣IC網 > PDF目錄384152 > BPV23FL (VISHAY SEMICONDUCTORS) PHOTODIODE PIN CHIP 950NM 0.6A/W SENSITIVITY 2PIN - Bulk PDF資料下載
參數資料
| 型號： | BPV23FL |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | PHOTODIODE PIN CHIP 950NM 0.6A/W SENSITIVITY 2PIN - Bulk |
| 中文描述： | Photodiodes 60V 215mW 870nm |
| 文件頁數： | 2/5頁 |
| 文件大?。?/td> | 116K |
| 代理商： | BPV23FL |
BPV23F, BPV23FL
Vishay Semiconductors
www.vishay.com
Rev. 1.8, 24-Aug-11
2
Document Number: 81510
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
V
R
= 0 V, f = 1 MHz, E = 0
Serial resistance
Open circuit voltage
E
e
= 1 mW/cm
2
,
λ
= 950 nm
Temperature coefficient of V
o
E
e
= 1 mW/cm
2
,
λ
= 950 nm
Short circuit current
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
TEST CONDITION
I
F
= 50 mA
I
R
= 100 μA, E = 0
V
R
= 10 V, E = 0
SYMBOL
V
F
V
(BR)
I
ro
C
D
R
S
V
o
TK
Vo
I
k
MIN.
TYP.
1
MAX.
1.3
UNIT
V
V
nA
pF
Ω
mV
mV/K
μA
60
2
30
48
900
390
- 2.6
60
V
R
= 12 V, f = 1 MHz
Reverse light current
V
R
= 5 V
I
ra
45
63
μA
Temperature coefficient of I
ra
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
R
= 10 V
V
R
= 5 V,
λ
= 870 nm
V
R
= 5 V,
λ
= 950 nm
TK
Ira
0.2
%/K
Absolute spectral sensitivity
s(
λ
)
s(
λ
)
λ
p
λ
0.5
η
NEP
D*
t
r
t
f
f
c
f
c
0.35
0.6
± 60
950
A/W
A/W
deg
nm
nm
%
W/
√
Hz
cm
√
Hz/W
ns
ns
MHz
MHz
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Quantum efficiency
Noise equivalent power
Detectivity
Rise time
Fall time
870 to 1050
90
4 x 10
-14
5 x 10
12
70
70
4
1
λ
= 950 nm
V
R
= 10 V,
λ
= 950 nm
V
R
= 10 V,
λ
= 950 nm
V
R
= 10 V, R
L
= 1 k
Ω
,
λ
= 820 nm
V
R
= 10 V, R
L
= 1 k
Ω
,
λ
= 820 nm
V
R
= 12 V, R
L
= 1 k
Ω
,
λ
= 870 nm
V
R
= 12 V, R
L
= 1 k
Ω
,
λ
= 950 nm
Cut-off frequency
20
40
60
80
1
10
100
1000
100
94 8403
V
R
= 10
V
T
am
b
- Am
b
ient Temperat
u
re (°C)
I
r
v
e
u
r
0.6
0.8
1.0
1.2
1.4
94 8409
V
= 5
V
λ
= 950 nm
100
80
60
40
20
0
I
v
e
v
e
u
r
T - Am
b
ient Temperat
u
re (°C)
r
相關PDF資料 |
PDF描述 |
|---|---|
| BPV23NF | Silicon PIN Photodiode(高速，反向電壓60V，紅外遠距離控制應用的PIN光二極管) |
| BPV23NF | Silicon PIN Photodiode |
| BPV23NFL | Silicon PIN Photodiode |
| BPV23NF | Photodiode PIN Chip 940nm 0.6A/W Sensitivity 2-Pin |
| BPW16N | Silicon NPN Phototransistor(檢測器應用的NPN外延平面型光晶體管) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BPV23FL/AS12 | 制造商:Vishay Semiconductors 功能描述: |
| BPV23L | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon PIN Photodiode |
| BPV23NF | 功能描述:光電二極管 60V 215mW 950nm RoHS:否 制造商:Vishay Semiconductors 產品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長:565 nm 上升時間:3.1 us 下降時間:3 us 半強度角度:50 deg 封裝 / 箱體:TO-5 |
| BPV23NF_06 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon PIN Photodiode |
| BPV23NF_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon PIN Photodiode, RoHS Compliant |
發(fā)布緊急采購，3分鐘左右您將得到回復。