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參數(shù)資料
| 型號(hào)： | BPV22NF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 光敏二極管 |
| 英文描述： | Photodiode PIN Chip 940nm 0.6A/W Sensitivity 2-Pin Side View |
| 中文描述： | Photodiodes 60 Degree 215mW |
| 文件頁(yè)數(shù)： | 2/5頁(yè) |
| 文件大小： | 116K |
| 代理商： | BPV22NF |
BPV22NF, BPV22NFL
Vishay Semiconductors
www.vishay.com
Rev. 1.9, 21-Feb-12
2
Document Number: 81509
For technical questions, contact:
detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc91000
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
BASIC CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
I
F
= 50 mA
I
R
= 100 μA, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 12 V, f = 1 MHz
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 950 nm
E
e
= 1 mW/cm
2
,
λ
= 870 nm,
V
R
= 5 V
E
e
= 1 mW/cm
2
,
λ
= 950 nm,
V
R
= 10 V
V
R
= 5 V,
λ
= 870 nm
V
R
= 5 V,
λ
= 950 nm
V
F
V
(BR)
I
ro
C
D
R
S
V
o
TK
Vo
I
k
1
1.3
V
Breakdown voltage
60
V
Reverse dark current
2
30
nA
Diode capacitance
70
pF
Ω
mV
Serial resistance
400
Open circuit voltage
370
Temperature coefficient of V
o
Short circuit current
- 2.6
mV/K
80
μA
Reverse light current
I
ra
55
85
μA
Temperature coefficient of I
ra
TK
Ira
0.1
%/K
Absolute spectral sensitivity
s(
λ
)
s(
λ
)
λ
p
λ
0.5
η
NEP
0.57
A/W
0.6
A/W
Angle of half sensitivity
± 60
deg
Wavelength of peak sensitivity
940
nm
Range of spectral bandwidth
790 to 1050
nm
Quantum efficiency
λ
= 950 nm
V
R
= 10 V,
λ
= 950 nm
V
R
= 10 V,
λ
= 950 nm
V
R
= 10 V, R
L
= 1 k
Ω
,
λ
= 820 nm
V
R
= 10 V, R
L
= 1 k
Ω
,
λ
= 820 nm
V
R
= 12 V, R
L
= 1 k
Ω
,
λ
= 870 nm
V
R
= 12 V, R
L
= 1 k
Ω
,
λ
= 950 nm
90
%
Noise equivalent power
4 x 10
-14
6 x 10
12
W/
√
Hz
cm
√
Hz/W
ns
Detectivity
D*
Rise time
t
r
t
f
f
c
f
c
100
Fall time
100
ns
Cut-off frequency
4
MHz
1
MHz
20
40
60
80
1
10
100
1000
100
94 8403
V
R
= 10
V
T
am
b
- Am
b
ient Temperat
u
re (°C)
I
r
v
e
u
r
0.6
0.8
1.0
1.2
1.4
94 8409
V
= 5
V
λ
= 950 nm
100
80
60
40
20
0
I
v
e
v
e
u
r
T - Am
b
ient Temperat
u
re (°C)
r
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