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參數(shù)資料
| 型號(hào)： | BPV21F |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon PIN Photodiode |
| 中文描述： | 硅PIN光電二極管 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 98K |
| 代理商： | BPV21F |
BPV21F(L)
Vishay Telefunken
2 (7)
Rev. 3, 16-Nov-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81507
Basic Characteristics
T
amb
= 25 C
Parameter
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Serial Resistance
Open Circuit Voltage
Temp. Coefficient of V
o
Short Circuit Current
Reverse Light Current
Test Conditions
I
F
= 50 mA
I
R
= 100 A, E = 0
V
R
= 10 V, E = 0
V
R
= 0 V, f = 1 MHz, E = 0
V
R
= 12 V, f = 1 MHz
E
e
= 1 mW/cm
2
, = 950 nm
E
e
= 1 mW/cm
2
, = 950 nm
E
e
= 1 mW/cm
2
, = 950 nm
E
e
= 1 mW/cm
2
,
= 950 nm, V
R
= 5 V
E
e
= 1 mW/cm
2
,
= 950 nm, V
R
= 10 V
V
R
= 5 V, = 870 nm
V
R
= 5 V, = 950 nm
Symbol
V
F
V
(BR)
I
ro
C
D
R
S
V
o
TK
Vo
I
k
I
ra
Min
Typ
1
Max
1.3
Unit
V
V
nA
pF
60
2
48
900
380
–2.6
35
38
30
mV
mV/K
A
A
27
Temp. Coefficient of I
ra
TK
Ira
0.1
%/K
Absolute Spectral Sensitivity
s( )
s( )
0.35
0.6
±
65
950
A/W
A/W
deg
nm
nm
%
W/
√
Hz
cm
√
Hz/
W
ns
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
Noise Equivalent Power
Detectivity
p
0.5
870...1050
90
4x10
–14
5x10
12
= 950 nm
V
R
= 10 V, = 950 nm
V
R
= 10 V, = 950 nm
NEP
D
*
Rise Time
V
R
= 10 V, R
L
= 1k ,
= 820 nm
V
R
= 10 V, R
L
= 1k ,
= 820 nm
V
R
= 12 V, R
L
= 1k ,
= 870 nm
V
R
= 12 V, R
L
= 1k ,
= 950 nm
t
r
70
Fall Time
t
f
70
ns
Cut–Off Frequency
f
c
4
MHz
f
c
1
MHz
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BPV21FL | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Silicon PIN Photodiode |
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| BPV22F | 功能描述:光電二極管 60 Degree 215mW RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Photodiodes 反向電壓:10 V 最大暗電流:30 nA 峰值波長(zhǎng):565 nm 上升時(shí)間:3.1 us 下降時(shí)間:3 us 半強(qiáng)度角度:50 deg 封裝 / 箱體:TO-5 |
| BPV22F | 制造商:Vishay Semiconductors 功能描述:PHOTO DIODE |
| BPV22F_08 | 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Silicon PIN Photodiode, RoHS Compliant |
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