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參數(shù)資料
| 型號(hào)： | BPV11 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Silicon NPN Phototransistor(檢測(cè)應(yīng)用的高靈敏度NPN外延平面型光晶體管) |
| 中文描述： | 硅npn型光電晶體管（檢測(cè)應(yīng)用的高靈敏度npn型外延平面型光晶體管） |
| 文件頁(yè)數(shù)： | 2/6頁(yè) |
| 文件大小： | 89K |
| 代理商： | BPV11 |
BPV11
Vishay Telefunken
2 (6)
Rev. 3, 20-May-99
www.vishay.de
FaxBack +1-408-970-5600
Document Number 81504
Basic Characteristics
T
amb
= 25 C
Parameter
Collector Emitter Breakdown
Voltage
Collector Dark Current
DC Current Gain
Collector Emitter Capacitance
Collector Base Capacitance
Collector Light Current
Test Conditions
I
C
= 1 mA
Symbol
V
(BR)CE
O
I
CEO
h
FE
C
CEO
C
CBO
I
ca
Min
70
Typ
Max
Unit
V
V
CE
= 10 V, E = 0
V
CE
= 5 V, I
C
= 5 mA, E = 0
V
CE
= 0 V, f = 1 MHz, E=0
V
CB
= 0 V, f = 1 MHz, E=0
E
e
=1 mW/cm
2
,
=950 nm, V
CE
=5 V
1
50
nA
450
15
19
10
pF
pF
mA
3
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
±
15
850
deg
nm
nm
mV
p
0.5
620...980
130
E
e
=1 mW/cm
2
, =950 nm,
I
C
=1 mA
V
S
=5 V, I
C
=5 mA,
R
L
=100
V
S
=5 V, I
C
=5 mA,
R
L
=100
V
S
=5 V, I
C
=5 mA,
R
L
=100
V
CEsat
300
t
on
6
s
Turn–Off Time
t
off
5
s
Cut–Off Frequency
f
c
110
kHz
Typical Characteristics
(T
amb
= 25 C unless otherwise specified)
0
20
T
amb
– Ambient Temperature (
°
C )
40
60
80
0
40
80
120
160
200
P
t
100
94 8300
R
thJA
Figure 1. Total Power Dissipation vs.
Ambient Temperature
94 8249
20
I
C
100
40
60
80
T
amb
– Ambient Temperature (
°
C )
10
0
10
1
10
2
10
3
10
4
V
CE
=10V
Figure 2. Collector Dark Current vs.
Ambient Temperature
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BPV11 | Silicon NPN Phototransistor |
| BPV11 | Photo Transistor, PHOTO TRANSISTOR DETECTOR, LEAD FREE, PLASTIC PACKAGE-3 |
| BPV20F | Silicon PIN Photodiode(反向電壓60V，紅外遠(yuǎn)距離控制應(yīng)用的PIN光二極管) |
| BPV20 | Silicon PIN Photodiode |
| BPV20F | Silicon PIN Photodiode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BPV11 | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1.3/4 |
| BPV11_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant |
| BPV11F | 功能描述:光電晶體管 15 Degree 150mW RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| BPV11F | 制造商:Vishay Intertechnologies 功能描述:PHOTOTRANSISTOR T1.3/4 |
| BPV11F_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN Phototransistor, RoHS Compliant |
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