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參數(shù)資料
| 型號： | BP1A4A |
| 廠商： | NEC Corp. |
| 英文描述： | On-chip resistor PNP silicon epitaxial transistor For mid-speed switching |
| 中文描述： | 片上電阻進(jìn)步黨硅外延晶體管中速開關(guān) |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 94K |
| 代理商： | BP1A4A |
Data Sheet D11740EJ2V0DS
2
BP1 SERIES
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base volgate
VCBO
25
V
Colletor to emitter voltage
VCEO
25
V
Emitter to base voltage
VEBO
10
V
Collector current (DC)
IC(DC)
0.7
A
Collector current (Pulse)
IC(pulse)
Note 1
1.0
A
Base current (DC)
IB(DC)
0.02
A
Total power dissipation
PT
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note 1 PW
≤ 10 ms, duty cycle ≤ 50 %
BP1A4A
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
22 V, IE = 0
100
nA
DC current gain
hFE1
Note 2
VCE =
2.0 V, IC = 0.1 A
200
DC current gain
hFE2
Note 2
VCE =
2.0 V, IC = 0.5 A
100
DC current gain
hFE3
Note 2
VCE =
2.0 V, IC = 0.7 A
50
Collector saturation voltage
VCE(sat)
Note 2
IC =
0.3 A, IB = 6 mA
0.28
0.4
V
Low level input voltage
VIL
Note 2
VCE =
5.0 V, IC = 100
A
0.3
V
Input resistance
R1
E-to-B resistance
R2
710
13
k
Note 2 PW
≤ 350
s, duty cycle ≤ 2 %
BP1L2Q
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
22 V, IE = 0
100
nA
DC current gain
hFE1
Note 2
VCE =
2.0 V, IC = 0.1 A
150
350
DC current gain
hFE2
Note 2
VCE =
2.0 V, IC = 0.5 A
100
300
DC current gain
hFE3
Note 2
VCE =
2.0 V, IC = 0.7 A
50
200
Low level output voltage
VOL
Note 2
VIN =
5.0 V, IC = 0.3 A
0.30
0.4
V
Low level input voltage
VIL
Note 2
VCE =
5.0 V, IC = 100
A
0.3
V
Input resistance
R1
329
470
611
E-to-B resistance
R2
3.29
4.7
6.11
k
Note 2 PW
≤ 350
s, duty cycle ≤ 2 %
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參數(shù)描述 |
|---|---|
| BP1A4M | 制造商:NEC 制造商全稱:NEC 功能描述:On-chip resistor PNP silicon epitaxial transistor For mid-speed switching |
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