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參數(shù)資料
| 型號(hào)： | BN1A4Z |
| 廠商： | NEC Corp. |
| 英文描述： | on-chip resistor PNP silicon epitaxial transistor For mid-speed switching |
| 中文描述： | 芯片電阻進(jìn)步黨硅外延晶體管中速開關(guān) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 106K |
| 代理商： | BN1A4Z |
1998
Document No. D13584EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
Printed in Japan
COMPOUND TRANSISTOR
BN1A4Z
on-chip resistor PNP silicon epitaxial transistor
For mid-speed switching
DATA SHEET
2002
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
FEATURES
On-chip bias resistor
(R1 = 10 k
)
Complementary transistor with BA1A3Q
ABSOLUTE MAXIMUM RATINGS (Ta = 25
°°°°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60
V
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
5
V
Collector current (DC)
IC(DC)
100
mA
Collector current (Pulse)
IC(pulse) *
200
mA
Total power dissipation
PT
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
*PW
≤ 10 ms, duty cycle ≤ 50 %
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (Ta = 25
°°°°C)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Collector cutoff current
ICBO
VCB =
50 V, IE = 0
100
nA
DC current gain
hFE1 **
VCE =
5.0 V, IC = 5.0 mA
135
190
600
DC current gain
hFE2 **
VCE =
5.0 V, IC = 50 mA
100
170
Collector saturation voltage
VCE(sat) **
IC =
5.0 mA, IB = 0.25 mA
0.07
0.2
V
Low level input voltage
VIL **
VCE =
5.0 V, IC = 100
A
0.57
0.5
V
High level input voltage
VIH **
VCE =
0.2 V, IC = 5.0 mA
2.0
0.9
V
Input resistance
R1
7.0
10
13.0
k
Turn-on time
ton
0.2
s
Storage time
tstg
5.0
s
Turn-off time
toff
VCC =
5.0 V, RL = 1.0 k
VI =
5.0 V, PW = 2.0
s
duty cycle
≤2 %
6.0
s
** Pulse test PW
≤ 350
s, duty cycle ≤ 2 %
hFE CLASSIFICATION
Marking
Q
P
K
hFE1
135 to 270
200 to 400
300 to 600
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