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參數(shù)資料
| 型號(hào)： | BLY89C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-120A, 4 PIN |
| 文件頁(yè)數(shù)： | 4/11頁(yè) |
| 文件大?。?/td> | 68K |
| 代理商： | BLY89C |
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLY89C
CHARACTERISTICS
T
j
= 25
°
C
Note
1.
Measured under pulse conditions: t
p
≤
200
μ
s;
δ ≤
0,02.
Breakdown voltage
Collector-emitter voltage
V
BE
= 0; I
C
= 25 mA
Collector-emitter voltage
open base; I
C
= 50 mA
Emitter-base voltage
open collector; I
E
= 10 mA
V
(BR)CES
>
36 V
V
(BR)CEO
>
18 V
V
(BR)EBO
>
4 V
Collector cut-off current
V
BE
= 0; V
CE
= 18 V
I
CES
<
10 mA
Transient energy
L = 25 mH; f = 50 Hz
open base
V
BE
= 1,5 V; R
BE
= 33
E
E
>
>
8 ms
8 ms
D.C. current gain
(1)
I
C
= 2,5 A; V
CE
= 5 V
h
FE
typ
50
10 to 80
Collector-emitter saturation voltage
(1)
I
C
= 7,5 A; I
B
= 1,5 A
V
CEsat
typ
1,7 V
Transition frequency
at f = 100 MHz
(1)
I
C
= 2,5 A; V
CE
= 13,5 V
I
C
= 7,5 A; V
CE
= 13,5 V
f
T
f
T
typ
typ
800 MHz
750 MHz
Collector capacitance
at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 15 V
C
c
typ
<
65 pF
90 pF
Feedback capacitance
at f = 1 MHz
I
C
= 100 mA; V
CE
= 15 V
C
re
C
cs
typ
41 pF
Collector-stud capacitance
typ
2 pF
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