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參數(shù)資料
| 型號： | BLY87 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | SPDT SUBMINIATURE POWER RELAY |
| 中文描述： | 甚高頻功率晶體管 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 79K |
| 代理商： | BLY87 |
August 1986
4
Philips Semiconductors
Product specification
VHF power transistor
BLY87C
CHARACTERISTICS
T
j
= 25
°
C
Note
1.
Measured under pulse conditions: t
p
≤
200
μ
s;
δ ≤
0,02.
Collector-emitter breakdown voltage
V
BE
= 0; I
C
= 5 mA
Collector-emitter breakdown voltage
open base; I
C
= 25 mA
Emitter-base breakdown voltage
open collector; I
E
= 1 mA
Collector cut-off current
V
BE
= 0; V
CE
= 18 V
Second breakdown energy; L = 25 mH; f = 50 Hz
open base
R
BE
= 10
D.C. current gain
(1)
I
C
= 0,75 A; V
CE
= 5 V
V
(BR) CES
>
36 V
V
(BR)CEO
>
18 V
V
(BR)EBO
>
4 V
I
CES
<
2 mA
E
SBO
E
SBR
>
>
0,5 mJ
0,5 mJ
typ.
40
10 to 100
h
FE
Collector-emitter saturation voltage
(1)
I
C
= 2 A; I
B
= 0,4 A
Transition frequency at f = 100 MHz
(1)
I
E
= 0,75 A; V
CB
= 13,5 V
I
E
= 2 A; V
CB
= 13,5 V
Collector capacitance at f = 1 MHz
I
E
= I
e
= 0; V
CB
= 13,5 V
Feedback capacitance at f = 1 MHz
I
C
= 100 mA; V
CE
= 13,5 V
Collector-stud capacitance
V
CEsat
typ.
0,85
V
f
T
f
T
typ.
typ.
950 MHz
850 MHz
C
c
typ.
16,5 pF
C
re
C
cs
typ.
typ.
12 pF
2 pF
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