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參數(shù)資料
| 型號(hào)： | BLX94C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 4/11頁 |
| 文件大小： | 62K |
| 代理商： | BLX94C |
1996 Feb 06
4
Philips Semiconductors
Product specification
UHF power transistor
BLX94C
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Measured under pulsed conditions: t
p
≤
200
μ
s;
δ ≤
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
1.5
50
1.1
MAX.
10
UNIT
V
(BR)CES
V
(BR)CEO
V
(BR)EBO
V
CEsat
I
CES
E
SBR
collector-emitter breakdown voltage V
BE
= 0; I
C
= 25 mA
collector-emitter breakdown voltage open base; I
C
= 100 mA
emitter-base breakdown voltage
collector-emitter saturation voltage
collector cut-off current
second breakdown energy
65
30
4
3
3
15
V
V
V
V
mA
mJ
mJ
open collector; I
E
= 10 mA
I
C
= 4 A; I
B
= 0.8 A; note 1
V
BE
= 0; V
CE
= 30 V
open base; L = 25 mH; f = 50 Hz
R
BE
= 10
; L = 25 mH; f = 50 Hz
V
CE
= 5 V; I
C
= 1.5 A; note 1
V
CB
= 28 V; I
E
=
1.5 A;
f = 500 MHz; note 1
V
CB
= 28 V; I
E
=
4 A;
f = 500 MHz; note 1
V
CB
= 28 V; I
E
= i
e
= 0; f = 1 MHz
V
CE
= 28 V; I
C
= 20 mA; f = 1 MHz;
h
FE
f
T
DC current gain
transition frequency
f
T
0.75
f
T
C
c
C
re
C
c-s
collector capacitance
feedback capacitance
collector-stud capacitance
33
18
1.2
pF
pF
pF
Fig.4
DC current gain as a function of collector
current; typical values.
Measured under pulsed conditions; t
p
≤
200
μ
s;
δ ≤
0.02;T
j
= 25
°
C.
(1) V
CE
= 25 V.
(2) V
CE
= 5 V.
handbook, halfpage
0
4
0
MBH099
50
2
IC (A)
hFE
VCE = 25 V
5 V
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values.
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
°
C.
handbook, halfpage
0
40
25
0
50
MBH098
20
VCB (V)
Cc
(pF)
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