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參數(shù)資料
| 型號： | BLW86 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | HF/VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁數(shù)： | 2/15頁 |
| 文件大?。?/td> | 117K |
| 代理商： | BLW86 |
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW86
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated h.f. and v.h.f.
transmitters with a nominal supply
voltage of 28 V. The transistor is
resistance stabilized and is
guaranteed to withstand severe load
mismatch conditions. Matched
h
FE
groups are available on request.
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance up to T
h
= 25
°
C
MODE OF
OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
η
%
z
i
Y
L
mS
d
3
dB
c.w. (class-B)
s.s.b. (class-AB)
s.s.b. (class-A)
28
28
26
175
45
>
typ. 19
typ. 22
7,5
>
typ. 45
70
0,7
+
j1,3
110
j62
1,6
28
1,6
28
5
47,5 (P.E.P.)
17 (P.E.P.)
typ.
30
typ.
42
PIN CONFIGURATION
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
1
2
3
4
MSB057
PINNING - SOT123
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
相關PDF資料 |
PDF描述 |
|---|---|
| BLW87 | VHF power transistor |
| BLW898 | UHF linear power transistor |
| BLW90 | UHF power transistor |
| BLW97 | HF power transistor |
| BLW98 | UHF linear power transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BLW87 | 制造商:ASI 制造商全稱:ASI 功能描述:NPN SILICON RF POWER TRANSISTOR |
| BLW89 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
| BLW898 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF linear power transistor |
| BLW90 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLW91 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
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