參數(shù)資料
型號: BLW50F
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: HF/VHF power transistor(HF/VHF功率 晶體管)
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-123A, 4 PIN
文件頁數(shù): 8/12頁
文件大?。?/td> 75K
代理商: BLW50F
August 1986
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
V
CE
= 50 V; f
1
= 28,000 MHz; f
2
= 28,001 MHz
List of components:
Note
1.
Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
OUTPUT POWER
G
p
η
dt
(%)
I
C
(A)
d
3
(1)
d
5
(1)
I
C(ZS)
T
h
W
dB
AT 65 W P.E.P.
dB
dB
<
30
mA
°
C
25
10 to 65 (P.E.P.)
typ. 18
typ. 45
typ. 1,45
typ.
30
50
C1
C3
C4
C7
C8
C9
L1
L2
L3
L4
R1
R2
=
=
=
=
=
=
=
=
=
=
=
=
C2 = 10 to 780 pF film dielectric trimmer
C5 = C6 = 220 nF polyester capacitor
120 pF ceramic capacitor (500 V)
150 pF ceramic capacitor (500 V)
47
μ
F/63 V electrolytic capacitor
3,9 nF ceramic capacitor
4 turns closely wound enamelled Cu wire (1,6 mm); int. dia 7,0 mm; leads 2
×
5 mm
Ferroxcube wide-band h.f. choke, grade 3B (cat.no. 4312 020 36640)
9 turns enamelled Cu wire (1,0 mm); int. dia. 10 mm; length 14,5 mm; leads 2
×
5 mm
6 turns enamelled Cu wire (1,0 mm); int. dia. 6,5 mm; length 11,0 mm; leads 2
×
5 mm
2,4
; parallel connection of 2
×
4,7
carbon resistors
39
carbon resistor
Fig.10 Test circuit; s.s.b. class-AB.
handbook, full pagewidth
MGP474
50
50
C2
L2
L3
C7
R2
C1
+
VCC
L1
R1
T.U.T.
C9
L4
C4
C5
C6
C8
C3
temperature
compensated bias
(Ri
<
0.1
)
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