參數(shù)資料
型號: BLW30
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-120A, 4 PIN
文件頁數(shù): 3/11頁
文件大?。?/td> 72K
代理商: BLW30
September 1991
3
Philips Semiconductors
Product specification
VHF power transistor
BLW30
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
, I
C(AV)
I
CM
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
collector current
open emitter
open base
open collector
DC or average value
peak value
f
>
1 MHz
RF operation;
f
>
1 MHz;
T
mb
= 25
°
C
36
16
3
6
18
V
V
V
A
A
P
tot
total power dissipation
100
W
T
stg
T
j
storage temperature range
junction operating temperature
65
150
200
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-mb(RF)
from junction to mounting base
P
tot
= 100 W;
T
mb
= 25
°
C
1.75
K/W
R
th mb-h
from mounting base to heatsink
0.45
K/W
Fig.2 Power/temperature derating curve.
(I) Continuous RF operation (f
>
1 MHz).
(II) Short time operation during mismatch
(f
>
1 MHz).
handbook, halfpage
MRA382
0
20
40
60
80
100
0
20
40
60
80
100
120
(W)
I
II
h
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