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參數(shù)資料
| 型號(hào)： | BLV946 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-273A, 6 PIN |
| 文件頁(yè)數(shù)： | 4/12頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | BLV946 |
1997 Oct 30
4
Philips Semiconductors
Product specification
UHF power transistor
BLV946
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Notes
1.
2.
Measured under pulsed conditions: t
p
≤
500
μ
s;
δ ≤
0.01.
C
C
value is that of the die only; it is not measurable because of internal matching network.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
3
120
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
open emitter; I
C
= 30 mA
open base; I
C
= 60 mA
open collector; I
E
= 1.2 mA
V
BE
= 0; V
CE
= 28 V
V
CE
= 10 V; I
C
= 2 A; note 1
V
CB
= 26 V; I
E
= i
e
= 0;
f = 1 MHz; note 2
70
30
3
30
33
V
V
V
mA
pF
Fig.4
DC current gain as a function of collector
current; typical values.
Measured under pulsed conditions; t
p
≤
500
μ
s;
δ ≤
0.01.
(1) V
CE
= 26 V.
(2) V
CE
= 10 V.
handbook, halfpage
hFE
0
40
60
20
80
0
1
2
3
4
5
6
IC(A)
MLD233
(2)
(1)
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