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參數(shù)資料
| 型號： | BLV920 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor(UHF 功率晶體管) |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BLV920 |
1997 Nov 17
4
Philips Semiconductors
Product specification
UHF power transistor
BLV920
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Measured under pulsed conditions: t
p
≤
500
μ
s;
δ ≤
0.01.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown
voltage
collector-emitter breakdown
voltage
emitter-base breakdown
voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
open emitter; I
C
= 15 mA
70
V
V
(BR)CEO
open base; I
C
= 30 mA
30
V
V
(BR)EBO
open collector; I
E
= 0.6 mA
3
V
I
CES
h
FE
C
c
C
re
V
BE
= 0; V
CE
= 28 V
V
CE
= 10 V; I
C
= 1 A; note 1
V
CB
= 26 V; I
E
= i
e
= 0; f = 1 MHz
V
CE
= 26 V; I
C
= 0; f = 1 MHz
30
17
11
1.5
120
mA
pF
pF
Fig.4
DC current gainas a function of collector
current; typical values.
Measured under pulsed conditions; t
p
≤
500
μ
s;
δ ≤
0.01.
(1) V
CE
= 26 V.
(2) V
CE
= 10 V.
handbook, halfpage
hFE
0
40
60
20
80
0
1
2
3
4
5
6
IC(A)
MLC671
(2)
(1)
Fig.5
Collector capacitance as a function of
collector-base voltage; typical values.
I
E
= i
e
= 0; f = 1 MHz.
handbook, halfpage
0
20
40
0
10
20
30
40
50
(pF)
Cc
VCB(V)
MLC672
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|---|---|
| BLV93 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV934 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV935 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
| BLV94 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
| BLV945A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Power Transistors for UHF |
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