參數(shù)資料
型號: BLV91
英文描述: TRANSISTOR | BJT | NPN | 16V V(BR)CEO | 400MA I(C) | SOT-172A1
中文描述: 晶體管|晶體管|叩| 16V的五(巴西)總裁| 400mA的一(c)|的SOT - 172A1
文件頁數(shù): 3/11頁
文件大?。?/td> 55K
代理商: BLV91
September 1988
3
Philips Semiconductors
Product specification
UHF power transistor
BLV91/SL
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Dissipation = 4.5 W
Note
1.
Device mounted on a printed-circuit board (see Fig.6).
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
DC or average
(peak value); f
>
1 MHz
Total power dissipation
f
>
1 MHz; T
mb
90
°
C
Storage temperature
Operating junction temperature
V
CBO
V
CEO
V
EBO
max.
max.
max.
36 V
16 V
3 V
I
C
; I
C(AV)
I
CM
max.
max.
0.4 A
1.2 A
P
tot(RF)
T
stg
T
j
max.
65 to
+
150
°
C
max.
6 W
200
°
C
From junction to ambient
(1)
(f
>
1 MHz)
T
a
= 25
°
C
From junction to mounting base
T
mb
= 25
°
C (f
>
1 MHz)
R
th j-a (RF)
max.
55 K/W
R
th j-mb (RF)
max.
15 K/W
Fig.2 Power/temperature curve.
I Continuous RF operation (f > 1 MHz)
II Short-time RF operation during mismatch (f > 1 MHz)
handbook, halfpage
(W)
0
II
I
40
80
Tmb (
°
C)
160
0
8
120
6
4
2
MDA398
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