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參數(shù)資料
| 型號(hào)： | BLV90 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-172D, 4 PIN |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | BLV90 |
February 1996
2
Philips Semiconductors
Product specification
UHF power transistor
BLV90
DESCRIPTION
NPN silicon planar epitaxial transistor designed for use in
mobile radio transmitters in the 900 MHz band.
FEATURES
diffused emitter-ballasting resistors for an optimum
temperature profile.
gold metallization ensures excellent reliability.
the device can be applied at rated output power without
an external heatsink when it is mounted on a
printed-circuit board (see Fig.6).
The transistor has a 4-lead envelope with a ceramic cap
(SOT-172D). All leads are isolated from the mounting
base.
QUICK REFERENCE DATA
RF performance at T
a
= 25
°
C in a common-emitter class-B circuit.
(1)
Note
1.
Device mounted on a printed-circuit board (see Fig.6).
MODE OF OPERATION
V
CE
V
f
MHz
P
L
W
G
p
dB
>
7.5
typ. 7.0
η
C
%
>
50
typ. 57
Narrow band; CW
12.5
9.6
900
900
1
1
PIN CONFIGURATION
Fig.1 Simplified outline. SOT172D.
handbook, halfpage
2
1
4
3
MSB007
Top view
PINNING - SOT172D.
PIN
DESCRIPTION
1
2
3
4
emitter
base
collector
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
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| BLV902 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 28V V(BR)CEO | 600MA I(C) | SOT-409B |
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| BLV909 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
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| BLV91/SL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power transistor |
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