參數(shù)資料
型號(hào): BLV909
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: RM Series - Econoline Unregulated DC-DC Converters; Input Voltage (Vdc): 3.3V; Output Voltage (Vdc): 12V; Power: 0.25W; Single Output Rail; Industry Standard Pinout; 1kVDC & 2kVDC Isolation; High Efficiency for Low Power Applications; UL94V-0 Package Material; Optional Continuous Short Circuit Protected; Fully Encapsulated; Efficiency to 80%; Custom versions available
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁(yè)數(shù): 3/16頁(yè)
文件大小: 122K
代理商: BLV909
1999 Jun 25
3
Philips Semiconductors
Product specification
UHF power transistor
BLV909
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1.
Transistor with metallized ground plane mounted on a printed-circuit board, see “Mounting and soldering section,
Handbook SC19a.”
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
I
C(AV)
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
average collector current
total power dissipation
storage temperature
operating junction temperature
open emitter
open base
open collector
65
70
30
3
1.5
1.5
29
+150
200
V
V
V
A
A
W
°
C
°
C
T
mb
= 25
°
C; note 1
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-mb
thermal resistance from junction to
mounting base
P
tot
= 29 W; T
mb
= 25
°
C; note 1
6
K/W
Fig.2 DC SOAR.
handbook, halfpage
10
1
1
MGG301
1
10
10
2
IC
(A)
VCE (V)
T
mb
= 25
°
C.
Fig.3 Power derating curves.
(1) Short-time operation during mismatch.
(2) Continuous operation.
handbook, halfpage
Ptot
(W)
0
40
(1)
(2)
80
160
0
40
MGD273
120
Tmb (
o
C)
30
20
10
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