參數(shù)資料
型號: BLV904
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor(UHF功率晶體管)
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-409B, 8 PIN
文件頁數(shù): 6/16頁
文件大?。?/td> 131K
代理商: BLV904
1997 Jul 15
6
Philips Semiconductors
Product specification
UHF power transistor
BLV904
Fig.8
Power gain and collector efficiency as
functions of peak envelope load power;
typical values.
V
CE
= 26 V; I
CQ
= 15 mA; f
1
= 960 MHz; f
2
= 960.1 MHz.
handbook, halfpage
Gp
(dB)
0
2
4
6
80
η
C
(%)
60
40
20
0
16
8
4
12
MGD940
PL (PEP) (W)
Gp
η
C
Fig.9
Peak envelope load power as a function of
peak envelope drive power; typical values.
V
CE
= 26 V; I
CQ
= 15 mA; f
1
= 960 MHz; f
2
= 960.1 MHz.
handbook, halfpage
0
4
PL
(PEP)
(W)
PD (PEP) (W)
0
2
0.05
0.1
0.2
0.15
MGD941
Fig.10 Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
V
CE
= 26 V; f
1
= 960 MHz; f
2
= 960.1 MHz.
(1) I
CQ
= 15 mA.
(2) I
CQ
= 40 mA.
(3) I
CQ
= 60 mA.
handbook, halfpage
0
(1)
(2)
(3)
30
40
50
2
dim
(dBc)
4
6
MGD942
PL (PEP) (W)
Fig.11 Intermodulation distortion as a function of
peak envelope load power; typical values.
V
CE
= 26 V; I
CQ
= 15 mA; f
1
= 960 MHz; f
2
= 960.1 MHz.
handbook, halfpage
dim
(dBc)
0
d5
d3
d7
2
4
6
30
50
60
40
MGD943
PL (PEP) (W)
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