參數(shù)資料
型號(hào)： BLV897
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF push-pull power transistor
中文描述： 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝： CERAMIC, SOT-324B, 5 PIN
文件頁(yè)數(shù)： 4/12頁(yè)
文件大?。?/td> 101K
代理商： BLV897
1997 Nov 10
4
Philips Semiconductors
Preliminary specification
UHF push-pull power transistor
BLV897
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter push-pull class-AB test circuit.
Ruggedness in class-AB operation
The BLV897 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases under the
conditions: V
CE
= 24 V; I
CQ
= 2
×
80 mA; f = 900 MHz; T
h
= 25
°
C; P
L
= 30 W. The transistor is also capable of
withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases at P
L
= 30 W (PEP).
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
2
×
80
2
×
80
P
L
(W)
G
p
(dB)
≥
10
≥
11
η
C
(%)
≥
45
≥
35
d
3
(dBc)
CW, class-AB
2-tone, class-AB
900
900
24
24
30
30 (PEP)
<
32; typ.
37
Fig.2
Load power as a function of drive power;
typical values.
V
CE
= 24 V; I
CQ
= 2
×
80 mA; f = 900 MHz.
handbook, halfpage
(W)
0
1
2
6
5
PD (W)
4
0
20
10
3
40
30
MBK287
Fig.3
Power gain and collector efficiency as
functions of load power; typical values.
V
CE
= 24 V; I
CQ
= 2
×
80 mA; f = 900 MHz.
handbook, halfpage
(dB)
0
10
20
Gp
40
50
PL (W)
0
12
30
10
8
6
4
2
η
C
(%)
50
60
70
0
40
30
20
10
MBK286
η
C
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