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參數(shù)資料
| 型號(hào)： | BLV862 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF linear push-pull power transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 89K |
| 代理商： | BLV862 |
1999 Jun 25
5
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV862
Fig.4
Power gain and collector efficiency as
functions of load power; typical values.
T
h
= 25
°
C; f = 860 MHz; V
CE
= 28 V; I
CQ
= 0.8 A.
handbook, halfpage
0
40
4
0
8
MGD529
80
120
200
160
Gp
(dB)
Gp
η
C
(%)
60
20
0
40
PL (W)
η
C
T
h
= 25
°
C; f = 860 MHz; V
CE
= 28 V; I
CQ
= 0.8 A.
Fig.5
Load power as a function of drive power;
typical values.
handbook, halfpage
0
PL
(W)
160
80
0
10
20
PD (W)
30
MGD530
Fig.6
Intermodulation distortion as a function of
output power; typical values.
T
= 25
°
C; V
= 28 V; I
= 0.8 A;
2-tone: f
vision
= 855.25 MHz (-8 dB); f
sideband
= 859.68 MHz (-16 dB).
handbook, halfpage
dim
(dB)
0
100
500
200
300
400
Po sync (W)
MGG812
30
40
50
60
Fig.7
Intermodulation distortion as a function of
output power; typical values.
T
= 25
°
C; V
= 28 V; I
= 0.8 A;
3-tone: f
= 855.25 MHz (-8 dB); f
sideband
= 859.68 MHz (-16 dB);
f
sound
= 860.75 MHz (-10 dB).
handbook, halfpage
dim
(dB)
0
100
400
30
40
50
60
200
300
MGG813
Po sync (W)
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