參數(shù)資料
型號(hào): BLV857
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF Linear push-pull power transistor(UHF 線性推挽式功率晶體管)
中文描述: 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-324B, 5 PIN
文件頁(yè)數(shù): 10/12頁(yè)
文件大小: 138K
代理商: BLV857
1997 Jan 16
10
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV857
Fig.11 Input impedance (per section) as a function
of frequency (series components);
typical values.
V
CE
= 25 V; I
CQ
= 2
×
1.1 A; P
o sync
= 10 W (total device); T
h
= 25
°
C.
handbook, halfpage
(
)
400
600
800
1000
ri
xi
4
3
2
1
0
f (MHz)
MBH761
Fig.12 Load impedance (per section) as a function
of frequency (series components);
typical values.
V
CE
= 25 V; I
CQ
= 2
×
1.1 A; P
o sync
= 10 W (total device); T
h
= 25
°
C.
handbook, halfpage
(
)
400
600
800
1000
XL
RL
8
6
4
2
0
f (MHz)
MBH762
Fig.13 Gain as a function of frequency;
typical values.
V
CE
= 25 V; I
CQ
= 2
×
1.1 A; P
o sync
= 10 W (total device); T
h
= 25
°
C.
handbook, halfpage
(dB)
400
600
800
1000
16
12
8
4
0
f (MHz)
MBH763
Fig.14 Definition of transistor impedance.
handbook, halfpage
MBA451
Zi
ZL
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