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參數(shù)資料
| 型號： | BLV45-12 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | VHF power transistor |
| 中文描述： | 甚高頻功率晶體管 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 64K |
| 代理商： | BLV45-12 |
August 1986
5
Philips Semiconductors
Product specification
VHF power transistor
BLV45/12
APPLICATION INFORMATION
R. F. performance in c.w. operation (common-emitter circuit; class-B)
f = 175 MHz; T
h
= 25
°
C; R
th mb-h
= 0,2 K/W
List of components:
Note
1.
American Technical Ceramics capacitor type 100B or capacitor of same quality.
MODE OF OPERATION
V
CE
V
P
L
W
G
p
dB
>
η
C
%
narrow band; c.w.
12,5
45
6,5
8,0
>
55
67
typ.
typ.
C1
C2
C3
C4
C6
C7
C9
L1
L2
L3
L4
L5
L6
L7
L8
L10 = strip, 18 mm
×
4 mm
L1, L3, L6 and L10 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric,
thickness 1/16 inch.
R1
= 4,7
±
10%, carbon resistor
= C11 = C12 = 4 to 40 pF film dielectric trimmer (cat.no. 2222 809 07008)
= C10 = 10 pF multilayer ceramic chip capacitor
(1)
= 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
= C5 = 91 pF multilayer ceramic chip capacitor
(1)
= 820 pF multilayer ceramic chip capacitor
(1)
= C8 = 2
×
4,7 pF multilayer ceramic chip capacitors
(1)
in parallel
= 100 nF polyester capacitor
= strip, 28 mm
×
4 mm
= 4 turns Cu wire (1,0 mm); int.dia. 4,0 mm; length 7,5 mm; leads 2
×
3,5 mm
= strip, 22 mm
×
6 mm
= 1 turn Cu wire (0,8 mm); int.dia. 3,0 mm; leads 2
×
9 mm
= L9 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36640)
= strip, 12 mm
×
6 mm
= 2 turns enamelled Cu wire (1,6 mm); int.dia. 5,0 mm; length 7,0 mm; leads 2
×
5 mm
= 2 turns enamelled Cu wire (1,6 mm); int.dia. 5,0 mm; length 7,0 mm; leads 2
×
3 mm
Fig.6 Class-B test circuit at f = 175 MHz.
handbook, full pagewidth
MGP351
50
L1
L2
L3
C5
C4
C2
T.U.T.
L4
L5
C12
C8
C7
L7
+
VCC
R1
C6
C9
L9
C11
C10
L6
L8
L10
C3
50
C1
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