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參數(shù)資料
| 型號： | BLV11 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 81K |
| 代理商： | BLV11 |
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLV11
APPLICATION INFORMATION
R. F. performance in c.w. operation (unneutralized common-emitter class-B circuit)
T
h
= 25
°
C
List of components:
f (MHz)
V
CE
(V)
13,5
12,5
P
L
(W)
15
15
P
S
(W)
<
2,4
G
p
(dB)
>
typ. 7,5
I
C
(A)
<
1,85
>
η
(%)
z
i
(
)
2,3
+
j2,2
Y
L
(mS)
130
j4,4
175
175
8,0
60
67
typ.
C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C6 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3 = 47 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor (500 V)
C5 = 100 nF polyester capacitor
C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
L1 = 2 turns Cu wire (1,6 mm); int. dia. 4,5 mm; length 5,7 mm; leads 2
×
5 mm
L2 = L6 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3 = L4 = strip (12 mm
×
6 mm); tap for C3 at 5 mm from transistor
L5 = 3 turns Cu wire (1,6 mm); int. dia. 7,5 mm; length 7,5 mm; leads 2
×
5 mm
L7 = 3 turns Cu wire (1,6 mm); int. dia. 6,5 mm; length 7,4 mm; leads 2
×
5 mm
L3 and L4 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1 = 10
carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit see Fig.8.
Fig.7 Test circuit; c.w. class-B.
handbook, full pagewidth
MGP253
50
50
C1
L1
L3
R1
L2
L6
L5
L7
L4
C2
C3
T.U.T.
C4
C5
+
VCC
C6
C7
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| BLV12 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power transistor |
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