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參數(shù)資料
| 型號： | BLV100 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 63K |
| 代理商： | BLV100 |
March 1993
4
Philips Semiconductors
Product specification
UHF power transistor
BLV100
CHARACTERISTICS
T
j
= 25
°
C.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)CES
collector-emitter breakdown voltage
V
BE
= 0;
I
C
= 8 mA
open base;
I
C
= 60 mA
open collector;
I
E
= 4 mA
V
BE
= 0;
V
CE
= 30 V
V
CE
= 25 V;
I
C
= 0.6 A
V
CB
= 25 V;
I
E
= I
e
= 0;
f = 1 MHz
V
CE
= 25 V;
I
C
= 40 mA;
f =1 MHz
50
V
V
(BR)CEO
collector-emitter breakdown voltage
30
V
V
(BR)EBO
emitter-base breakdown voltage
4
V
I
CES
collector-emitter leakage current
2
mA
h
FE
DC current gain
20
75
‘
C
c
collector capacitance
13.5
pF
C
re
feedback capacitance
8.4
pF
C
c-f
collector-flange capacitance
2
pF
Fig.4
DC current gain as a function of collector
current, typical values.
V
CE
= 25 V.
handbook, halfpage
hFE
0
2
0
20
40
60
80
0.4
0.8
1.2
1.6
MDA544
IC (A)
Fig.5
Output capacitance as a function of
collector-base voltage, typical values.
handbook, halfpage
0
40
20
0
10
Cc
(pF)
VCB (V)
20
30
MDA542
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