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參數(shù)資料
| 型號(hào)： | BLU30 |
| 英文描述： | UHF power transistor |
| 中文描述： | 超高頻大功率晶體管 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大?。?/td> | 69K |
| 代理商： | BLU30 |
January 1985
4
Philips Semiconductors
Product specification
UHF power transistor
BLU30/12
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Note
1.
Device mounted in SOT-119 envelope without inputmatching.
Collector-base breakdown voltage
I
C
= 50 mA; open emitter
Collector-emitter breakdown voltage
I
C
= 100 mA; open base
Emitter-base breakdown voltage
I
E
= 10 mA; open collector
Collector cut-off current
V
BE
= 0; V
CE
= 16 V
Second breakdown energy
L = 25 mH; f = 50 Hz; R
BE
= 10
D.C. current gain
V
(BR)CBO
>
36 V
V
(BR)CEO
>
16,5 V
V
(BR)EBO
>
4 V
I
CES
<
22 mA
E
SBR
>
8 mJ
I
C
= 4 A; V
CE
= 10 V
h
FE
>
typ.
15
60
Collector capacitance at f = 1 MHz
(1)
I
E
= i
e
= 0; V
CB
= 12,5 V
Feed-back capacitance at f = 1 MHz
(1)
I
C
= 0; V
CE
= 12,5 V
Collector-flange capacitance
C
c
typ.
85 pF
C
re
C
cf
typ.
typ.
52 pF
3 pF
Fig.4 T
j
= 25
°
C; typ. values.
handbook, halfpage
0
4
8
IC (A)
hFE
16
60
20
0
40
12
MDA326
VCE = 12.5 V
10 V
Fig.5 I
E
= i
e
= 0; f = 1 MHz; typ. values.
handbook, halfpage
(pF)
0
20
50
90
130
170
210
4
8
12
VCB (V)
16
MDA327
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