- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄383944 > BLS7G3135LS-350P (NXP Semiconductors N.V.) LDMOS S-Band radar power transistor PDF資料下載
參數(shù)資料
| 型號(hào)： | BLS7G3135LS-350P |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | LDMOS S-Band radar power transistor |
| 封裝： | BLS7G3135LS-350P<SOT539B (SOT539B)|<<http://www.nxp.com/packages/SOT539B.html<1<Always Pb-free,; |
| 文件頁(yè)數(shù)： | 3/9頁(yè) |
| 文件大?。?/td> | 2830K |
| 代理商： | BLS7G3135LS-350P |
4
5
Mobile communication infrastructure
portfolio overview
RF power
We offer a complete line-up of RF power transistors operating from 450 MHz right up to 3.8 GHz, covering all cellular technologies
GSM/EDGE, CDMA, (TD-S)CDMA, W-CDMA/UMTS, and WiMAX infrastructures. The latest 2- and 3-way Doherty designs are
helping drive efficiency way beyond 40% in base stations for WiMAX, LTE, W-CDMA, and TD-SCDMA, which use large peak to
average ratio (PAR) signals.
Integrated Doherty amplifiers
From the outside, these devices look like an ordinary transistor. In fact, they are
integrated Doherty amplifiers that deliver the highest efficiency levels for base station
applications. They are just as easy to design-in as a standard class AB transistors, so
they also provide significant space and cost savings.
Discrete Doherty amplifiers
In addition to the integrated versions, NXP also offers reference designs for very
efficient, high power, discrete 2- and 3- way Doherty amplifiers. The 2-way designs
based on the BLF22LS-130 device deliver 47.0 dBm (50 W) with 43% efficiency and 15.7
dB gain for WCDMA applications. Our flagship 3-way Doherty reference design even
achieves 47% efficiency at 48 dBm (63 W) output power and 15.0 dB gain. The current
design covers the W-CDMA standard for band 1 operation and is tailored towards high
yield, minimum tuning, volume manufacturing.
All our reference designs are supported by comprehensive support documentation and
hardware.
Rugged RF power transistors
Ruggedness is one of the most important reliability parameters for RF power transistors. NXP has led the way since introducing
its first LDMOS transistors nearly a decade ago. All of our transistors are designed to withstand a mismatch of 10:1 (VSWR)
or more. Some of our 6
th
generation LDMOS transistors have been proven to be virtually indestructible. Recently we also
introduced an extremely rugged technology based on 6th Generaton, HV LDMOS, which can even take the place of legacy
VDMOS products. We could not destroy these “Unbreakable LDMOS” transistors. One example of this is the BLF578XR.
The next generation of LDMOS RF power transistors for wireless infrastructure: NXP’s Gen8
NXP recently announced the 8th generation of its RF power device portfolio for base stations. Listening carefully to the world’s
leading infrastructure providers and understanding their requirements, a holistic approach was taken during the development
of Gen8. This basically means that we scrutinized every little detail of a power transistor and reconsidered the entire “transistor
system” to come up with a new generation, which performs markedly better than its predecessors and again sets standards for the
industry. Gen 8 clearly addresses the key trends in the wireless infrastructure industry:
Completing NXP’s RF power transistor offering: products in plastic packages (OMP)
NXP currently develops a complete line of overmolded plastic (OMP) RF power transistors and MMICs with peak powers ranging
from 2.5 to 200 Watts. The main benefit of plastic packages is cost effectiveness with little or no impact on performance. The range
of plastic devices will complement the extensive range of RF power products NXP offers in ceramic packages for all frequency
ranges and applications up to 2.45 GHz.
`
Increasing signal bandwidths up to 100 MHz
`
Cost sensitivity
`
Reduction in the size/weight/volume of the cabinet
`
Continuous need for greater electrical efficiency to reduce
cooling requirements and operating expenses
`
Ever increasing output power to unprecedented levels
`
Need to deploy multi-standard and future-proof solutions
BLF8G10LS-160
SOT1204
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BGU7051 | SiGe:C Low Noise High Linearity Amplifier |
| BGU7052 | SiGe:C Low Noise High Linearity Amplifier |
| BGU7053 | SiGe:C Low Noise High Linearity Amplifier |
| BGA7204 | 700 MHz to 3760 MHz high linearity variable gain amplifier |
| BGA7210 | 700 MHz to 3800 MHz high linearity variable gain amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLS7G3135LS-350P,1 | 制造商:NXP Semiconductors 功能描述:BLS7G3135LS-350P/LDMOST/TUBE-B - Rail/Tube 制造商:NXP Semiconductors 功能描述:IC TRANS LDMOST 350W SOT-539B |
| BLS8 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses- Special Midget |
| BLS8/10 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses- Special Midget |
| BLS8G3D1609DS1S00 | 制造商:Micron Consumer Products Group 功能描述:8GB, BALLISTIX 240-PIN DIMM, DDR3 PC3-12800 MEMORY MODULE - Bulk |
| BLS9G2729L-350U | 功能描述:RF MOSFET LDMOS 28V SOT502A 制造商:ampleon usa inc. 系列:- 包裝:托盤 零件狀態(tài):在售 晶體管類型:LDMOS 頻率:2.7GHz ~ 2.9GHz 增益:14dB 電壓 - 測(cè)試:28V 額定電流:4μA 噪聲系數(shù):- 電流 - 測(cè)試:400mA 功率 - 輸出:350W 電壓 - 額定:65V 封裝/外殼:SOT-502A 供應(yīng)商器件封裝:SOT502A 標(biāo)準(zhǔn)包裝:60 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。