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參數(shù)資料
| 型號(hào)： | BLF861A |
| 廠商： | ADVANCED SEMICONDUCTOR INC |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF POWER LDMOS TRANSISTOR |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | 0.385 X 0.850 INCH, FM-4 |
| 文件頁(yè)數(shù)： | 1/1頁(yè) |
| 文件大?。?/td> | 18K |
| 代理商： | BLF861A |
A D V A N C E D S E M I C O N D U C T O R, I N C.
REV. A
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1202
FAX (818) 765-3004
1/1
Specifications are subject to change without notice.
CHARACTERISTICS
T
C
= 25 °C
SYMBOL
BV
DSS
I
D
= 1.5 mA
I
DSS
V
DS
= 32 V
I
DSX
V
DS
= 10 V
I
GSS
V
DS
= 0 V
V
GS(th)
I
D
= 150 mA V
DS
= 10 V
R
DS(on)
I
D
= 4.0 A
g
fs
I
D
= 4.0 A
C
iss
C
oss
C
rss
G
p
η
D
TEST CONDITIONS
MINIMUM
65
TYPICAL
MAXIMUM
UNITS
V
V
GS
= 0 V
V
GS
= V
GSth
+ 9 V
V
GS
=
±
15 V
2.2
μA
18
A
25
nA
4.0
5.5
V
V
GS
= V
GSth
+ 9 V
V
DS
= 10 V
160
m
S
4.0
V
DS
= 32 V
V
GS
= 0 V
f = 1.0 MHz
82
40
6.0
14.5
pF
V
DS
= 32 V
P
out
= 150 W f = 860 MHz
13.5
50
dB
%
UHF POWER LDMOS TRANSISTOR
PACKAGE STYLE .385X.850 4LFG
1 & 2 = DRAIN 3 & 4 = GATE
5 = SOURCE
DESCRIPTION:
The
ASI BLF861A
ia a Silicon N-
channel enhancement mode lateral D-
MOS push-pull transistor.
FEATURES:
Internal input-output matching
Omnigold
Metalization System
MAXIMUM RATINGS
I
D
18 A
V
DS
65 V
V
GS
±
15 V
P
DISS
318 W @ T
C
= 25 °C
T
J
-65 °C to +200 °C
T
STG
-65 °C to +150 °C
θ
JC
0.55 °C/W
BLF861A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF861A,112 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS 150W UHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF861A112 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BLF871 | 功能描述:射頻MOSFET電源晶體管 100W, HF-1GHz RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF871,112 | 功能描述:射頻MOSFET電源晶體管 Trans MOSFET N-CH 89V 3-Pin RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF871112 | 制造商:NXP Semiconductors 功能描述:N CH UHF BROADCAST POWER LDMOS 40V 10M |
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