參數(shù)資料
型號： BLF4G20LS-110B
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC, LDMOST, 2 PIN
文件頁數(shù)： 3/12頁
文件大?。?/td> 108K
代理商： BLF4G20LS-110B
9397 750 14548
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 10 January 2006
3 of 12
Philips Semiconductors
BLF4G20LS-110B
UHF power LDMOS transistor
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLF4G20LS-110B is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 650 mA; P
L
= 110 W (CW); f = 1990 MHz.
Table 6:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
gate-source threshold voltage
V
GSq
gate-source quiescent voltage
I
DSS
drain leakage current
I
DSX
drain cut-off current
Characteristics
Conditions
V
GS
= 0 V; I
D
= 0.9 mA
V
DS
= 10 V; I
D
= 180 mA
V
DS
= 28 V; I
D
= 900 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 6 V;
V
DS
= 10 V
V
GS
=
±
15 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 10 A
Min
65
2.5
2.7
-
27
Typ
-
3.1
3.2
-
30
Max Unit
-
3.5
3.7
3
-
V
V
V
μ
A
A
I
GSS
g
fs
R
DS(on)
gate leakage current
forward transconductance
drain-source on-state resistance V
GS
= V
GS(th)
+ 6 V;
-
-
-
-
9.0
90
300
-
-
nA
S
m
I
D
= 6 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
C
rs
feedback capacitance
-
2.5
-
pF
Table 7:
Mode of operation: GSM EDGE; f = 1930 MHz and 1990 MHz; RF performance at V
DS
= 28 V;
I
Dq
= 650 mA; T
case
= 25
°
C; unless otherwise specified; in a class-AB production test circuit.
Symbol
Parameter
G
p
power gain
IRL
input return loss
η
D
drain efficiency
ACPR
400
adjacent channel power ratio (400 kHz)
ACPR
600
adjacent channel power ratio (600 kHz)
EVM
rms
rms EDGE signal distortion error
EVM
M
peak EDGE signal distortion error
Application information
Conditions
P
L(AV)
= 48 W
P
L(AV)
= 48 W
P
L(AV)
= 48 W
P
L(AV)
= 48 W
P
L(AV)
= 48 W
P
L(AV)
= 48 W
P
L(AV)
= 48 W
Min
13
-
36
-
-
-
-
Typ
13.8
10
38.5
61
74
2.1
7.0
Max
-
6.5
-
58
71
3.3
10
Unit
dB
dB
%
dBc
dBc
%
%
相關(guān)PDF資料
PDF描述
BLF522 UHF power MOS transistor
BLF543 UHF power MOS transistor
BLF544B UHF push-pull power MOS transistor
BLF545 UHF push-pull power MOS transistor
BLF547 ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF4G20LS-110B,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G20LS-130 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G20LS-130,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF4G20S-110 制造商:NXP Semiconductors 功能描述:MOSFET Transistor, N-Channel, SOT-502B
BLF4G20S-110B 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*