參數(shù)資料
型號: BLF2047L
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power LDMOS transistor(UHF 功率 LDMOS晶體管)
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: SOT-502A, 2 PIN
文件頁數(shù): 4/12頁
文件大?。?/td> 93K
代理商: BLF2047L
1999 Dec 06
4
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2047L
handbook, halfpage
0
100
5
MGS950
10
50
η
D
(%)
0
10
20
30
40
20
40
60
80
Gp
(dB)
Gp
PL (PEP) (W)
η
D
Fig.2
Power gain and drain efficiency as a
function of load power; typical values.
f
1
= 2000 MHz; f
2
= 2000.1 MHz; V
DS
= 26 V;
I
DQ
= 350 mA; T
h
25
°
C.
handbook, halfpage
(dBc)
20
40
60
10
30
50
MGS951
0
100
20
40
60
80
PL (PEP) (W)
d3
d5
d7
f
1
= 2000 MHz; f
2
= 2000.1 MHz; V
DS
= 26 V;
I
DQ
= 350 mA; T
h
25
°
C.
Fig.3
Intermodulation distortion as a function of
load power; typical values.
handbook, halfpage
(
)
1.6
1.8
2
2.4
2
6
MGS952
2.2
4
2
0
xi
ri
f (GHz)
Fig.4
Input impedance as a function of frequency
(series components); typical values.
V
DS
= 26 V; I
D
= 350 mA; P
L
= 65 W; T
h
25
°
C.
handbook, halfpage
(
)
1.6
1.8
2
2.4
6
2
MGS953
2.2
0
2
4
RL
XL
f (GHz)
Fig.5
Load impedance as a function of frequency
(series components); typical values.
V
DS
= 26 V; I
D
= 350 mA; P
L
= 65 W; T
h
25
°
C.
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