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參數(shù)資料
| 型號： | BLF2043F |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 2.2A I(D) | FO-67VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 75V的五（巴西）直| 2.2AI（四）|佛67VAR |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 109K |
| 代理商： | BLF2043F |
2002 May 17
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-70
handbook, halfpage
Gp
(dB)
Gp
η
D
(%)
η
D
10
5
0
30
10
0
20
MGW534
30
34
32
36
38
40
PL(AV) (dBm)
Fig.6
Powergainanddrainefficiencyasfunctions
of average load power; typical values.
V
DS
= 28 V; I
= 450 mA; T
≤
25
°
C;
f
1
= 2135 MHz; f
2
= 2145 MHz.
Two-carrier W-CDMA performance.
Input signal: 3GPP W-CDMA 1-64DPCH with 66 % clipping;
peak to average power ratio: 8.5 dB at 0.01 % and 9.2 dB at
0.0001 % (CCDF) per carrier;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
handbook, halfpage
dim
(dBc)
ACLR
(dBc)
30
34
32
36
38
40
20
60
40
0
20
60
40
MGW535
ACLR
dim
PL(AV) (dBm)
Fig.7
Intermodulation distortion and adjacent
channel power ratio as functions of average
load power; typical values.
V
DS
= 28 V; I
= 450 mA; T
≤
25
°
C;
f
1
= 2135 MHz; f
2
= 2145 MHz.
Two-carrier W-CDMA performance.
Input signal: 3GPP W-CDMA 1-64DPCH with 66 % clipping;
peak to average power ratio: 8.5 dB at 0.01 % and 9.2 dB at
0.0001 % (CCDF) per carrier;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| BLF2043F /T3 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS 10W UHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF2043F,112 | 功能描述:射頻MOSFET電源晶體管 BULK TNS-RFPR RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF2043F,135 | 功能描述:射頻MOSFET電源晶體管 RF LDMOS 10W UHF RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF2045 | 功能描述:射頻MOSFET電源晶體管 BULK TNS-RFPR RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF2045,112 | 功能描述:射頻MOSFET電源晶體管 BULK TNS-RFPR RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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