參數(shù)資料
型號(hào): BLF2022-70
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 65V V(BR)DSS | 9A I(D) | SOT-502A
中文描述: 晶體管| MOSFET的| N溝道| 65V的五(巴西)直| 9A條(?。﹟的SOT - 502A
文件頁(yè)數(shù): 5/12頁(yè)
文件大?。?/td> 109K
代理商: BLF2022-70
2002 May 17
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-70
handbook, halfpage
Gp
(dB)
Gp
η
D
(%)
η
D
10
5
0
30
10
0
20
MGW534
30
34
32
36
38
40
PL(AV) (dBm)
Fig.6
Powergainanddrainefficiencyasfunctions
of average load power; typical values.
V
DS
= 28 V; I
= 450 mA; T
25
°
C;
f
1
= 2135 MHz; f
2
= 2145 MHz.
Two-carrier W-CDMA performance.
Input signal: 3GPP W-CDMA 1-64DPCH with 66 % clipping;
peak to average power ratio: 8.5 dB at 0.01 % and 9.2 dB at
0.0001 % (CCDF) per carrier;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
handbook, halfpage
dim
(dBc)
ACLR
(dBc)
30
34
32
36
38
40
20
60
40
0
20
60
40
MGW535
ACLR
dim
PL(AV) (dBm)
Fig.7
Intermodulation distortion and adjacent
channel power ratio as functions of average
load power; typical values.
V
DS
= 28 V; I
= 450 mA; T
25
°
C;
f
1
= 2135 MHz; f
2
= 2145 MHz.
Two-carrier W-CDMA performance.
Input signal: 3GPP W-CDMA 1-64DPCH with 66 % clipping;
peak to average power ratio: 8.5 dB at 0.01 % and 9.2 dB at
0.0001 % (CCDF) per carrier;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
Measured in a W-CDMA application circuit.
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